TDA2611现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

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产品型号TDA2611的概述

芯片TDA2611的概述 TDA2611是一款广泛应用于音频功率放大器的集成电路（IC），适用于家庭音响、便携式音响系统和各种音频应用。该芯片主要用于驱动高功率扬声器，能够提供高效的音频放大性能，使其在音频设备中占据重要位置。由于其卓越的音质和相对简单的外部电路需求，TDA2611已经成为音频功率放大器领域中的经典解决方案。该芯片的设计目的是为了实现低失真、低噪声和高输出功率，使其能够适应不同的使用场景。TDA2611一般工作在AB类放大模式，这种设计允许它在提供足够输出功率的同时，保持较低的热量产生和高效率。此外，TDA2611还具有过载保护和短路保护功能，确保其在异常情况下的安全和稳定。芯片TDA2611的详细参数 TDA2611的技术参数表现出其优秀的性能和适用广泛的特性： - 工作电压范围：12V至30V - 输出功率：最大可达25W（8Ω扬声器负载） - 频率响应：20...

产品型号TDA2611的Datasheet PDF文件预览

INTEGRATED CIRCUITS

DATA SHEET

TDA2611A

5 W audio power amplifier

November 1982

Product speciﬁcation

File under Integrated Circuits, IC01

Philips Semiconductors

Product speciﬁcation

5 W audio power ampliﬁer

TDA2611A

The TDA2611A is a monolithic integrated circuit in a 9-lead single in-line (SIL) plastic package with a high supply voltage

audio amplifier. Special features are:

• possibility for increasing the input impedance

• single in-line (SIL) construction for easy mounting

• very suitable for application in mains-fed apparatus

• extremely low number of external components

• thermal protection

• well defined open loop gain circuitry with simple quiescent current setting and fixed integrated closed loop gain.

QUICK REFERENCE DATA

Supply voltage range

6 to 35 V

1,5 A

Repetitive peak output current

ORM

Output power at d = 10%

tot

V = 18 V; R = 8 Ω

typ.

4,5 W

5 W

V = 25 V; R = 15 Ω

Total harmonic distortion at P < 2 W; R = 8 Ω

0,3 %

45 kΩ

25 mA

55 mV

tot

Input impedance

Total quiescent current at V = 18 V

|Z |

tot

Sensitivity for P = 2,5 W; R = 8 Ω

Operating ambient temperature

Storage temperature

−25 to + 150 °C

−55 to + 150 °C

amb

stg

PACKAGE OUTLINE

9-lead SIL; plastic (SOT110B); SOT110-1; 1996 July 23.

November 1982

Philips Semiconductors

Product speciﬁcation

5 W audio power ampliﬁer

TDA2611A

Fig.1 Circuit diagram; pin 3 not connected.

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Supply voltage

max.

35 V

3 A

Non-repetitive peak output current

Repetitive peak output current

Total power dissipation

max.

OSM

ORM

1,5 A

see derating curves Fig. 2

Storage temperature

−55 to + 150 °C

−25 to + 150 °C

stg

Operating ambient temperature

amb

November 1982

Philips Semiconductors

Product speciﬁcation

5 W audio power ampliﬁer

TDA2611A

Fig.2 Power derating curves.

HEATSINK EXAMPLE

Assume V = 18 V; R = 8 Ω; T

= 60 °C maximum; T = 150 °C (max. for a 4 W application into an 8 Ω load, the

amb

maximum dissipation is about 2,2 W).

The thermal resistance from junction to ambient can be expressed as:

150 – 60

R_{th j-a}= R_{th j-tab}+ R_{th tab-h}+ R_{th h-a}

= 41 K/W.

----------------------

2, 2

Since R

= 11 K/W and R

= 1 K/W, R = 41 − (11 + 1) = 29 K/W.

th h-a

th j-tab

th tab-h

November 1982

Philips Semiconductors

Product speciﬁcation

5 W audio power ampliﬁer

TDA2611A

D.C. CHARACTERISTICS

Supply voltage range

6 to 35 V

Repetitive peak output current

1,5 A

ORM

tot

Total quiescent current at V = 18 V

typ.

25 mA

A.C. CHARACTERISTICS

= 25 °C; V = 18 V; R = 8 Ω; f = 1 kHz unless otherwise speciﬁed; see also Fig. 3

P L

amb

A.F. output power at d = 10%

tot

4 W

4,5 W

1,7 W

0,65 W

6 W

V = 18 V; R = 8 Ω

typ.

V = 12 V; R = 8 Ω

V = 8,3 V; R = 8 Ω

V = 20 V; R = 8 Ω

V = 25 V; R = 15 Ω

5 W

0,3 %

1 %

Total harmonic distortion at P = 2 W

tot

Frequency response

Input impedance

15 kHz

(1)

|Z |

typ.

45 kΩ

0,2 mV

0,5 mV

55 mV

Noise output voltage at R = 5 kΩ; B = 60 Hz to 15 kHz

typ.

Sensitivity for P = 2,5 W

44 to 66 mV

Note

1. Input impedance can be increased by applying C and R between pins 5 and 9 (see also Figures 6 and 7).

November 1982

Philips Semiconductors

Product speciﬁcation

5 W audio power ampliﬁer

TDA2611A

Fig.3 Test circuit; pin 3 not connected.

Fig.4 Total harmonic distortion as a function of output power.

November 1982

Philips Semiconductors

Product speciﬁcation

5 W audio power ampliﬁer

TDA2611A

Fig.5 Output power as a function of supply voltage.

Fig.6 Input impedance as a function of frequency; curve a for C = 1 µF, R = 0 Ω; curve b for

C = 1 µF, R = 1 kΩ; circuit of Fig. 3; C2 = 10 pF; typical values.

November 1982

Philips Semiconductors

Product speciﬁcation

5 W audio power ampliﬁer

TDA2611A

Fig.7 Input impedance as a function of R in circuit of Fig. 3; C = 1 µF; f = 1 kHz.

Fig.8 Total harmonic distortion as a function of R in the circuit of Fig. 3; P = 3,5 W; f = 1 kHz.

November 1982

Philips Semiconductors

Product speciﬁcation

5 W audio power ampliﬁer

TDA2611A

Fig.9 Total power dissipation and efficiency as a function of output power.

November 1982

Philips Semiconductors

Product speciﬁcation

5 W audio power ampliﬁer

TDA2611A

APPLICATION INFORMATION

Fig.10 Ceramic pickup amplifier circuit.

Fig.11 Total harmonic distortion as a function of output power;

with tone control;

− − − without tone control; in circuit of Fig. 10; typical values.

November 1982

Philips Semiconductors

Product speciﬁcation

5 W audio power ampliﬁer

TDA2611A

Fig.12 Frequency characteristics of the circuit of Fig. 10;

tone control max. high;

− − − tone control min. high; P relative to 0 dB = 3 W; typical values.

Fig.13 Frequency characteristic of the circuit of Fig. 10; volume control at the top; tone control max. high.

November 1982

Philips Semiconductors

Product speciﬁcation

5 W audio power ampliﬁer

TDA2611A

PACKAGE OUTLINE

SIL9MPF: plastic single in-line medium power package with fin; 9 leads

SOT110-1

pin 1 index

10 mm

scale

DIMENSIONS (mm are the original dimensions)

(1)

max.

(1)

UNIT

18.5

17.8

8.7 15.8 1.40 0.67 1.40 0.48 21.8 21.4 6.48

8.0 15.4 1.14 0.50 1.14 0.38 21.4 20.7 6.20

3.9 2.75 3.4 1.75 15.1

3.4 2.50 3.2 1.55 14.9

4.4

4.2

5.9

5.7

2.54

3.7

0.25 1.0

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

REFERENCES

OUTLINE

EUROPEAN

PROJECTION

ISSUE DATE

VERSION

IEC

JEDEC

EIAJ

92-11-17

95-02-25

SOT110-1

November 1982

Philips Semiconductors

Product speciﬁcation

5 W audio power ampliﬁer

TDA2611A

The device may be mounted up to the seating plane, but

the temperature of the plastic body must not exceed the

SOLDERING

Introduction

specified maximum storage temperature (T

). If the

stg max

printed-circuit board has been pre-heated, forced cooling

may be necessary immediately after soldering to keep the

temperature within the permissible limit.

There is no soldering method that is ideal for all IC

packages. Wave soldering is often preferred when

through-hole and surface mounted components are mixed

on one printed-circuit board. However, wave soldering is

not always suitable for surface mounted ICs, or for

printed-circuits with high population densities. In these

situations reflow soldering is often used.

Repairing soldered joints

Apply a low voltage soldering iron (less than 24 V) to the

lead(s) of the package, below the seating plane or not

more than 2 mm above it. If the temperature of the

soldering iron bit is less than 300 °C it may remain in

contact for up to 10 seconds. If the bit temperature is

between 300 and 400 °C, contact may be up to 5 seconds.

This text gives a very brief insight to a complex technology.

A more in-depth account of soldering ICs can be found in

our “IC Package Databook” (order code 9398 652 90011).

Soldering by dipping or by wave

The maximum permissible temperature of the solder is

260 °C; solder at this temperature must not be in contact

with the joint for more than 5 seconds. The total contact

time of successive solder waves must not exceed

5 seconds.

DEFINITIONS

Data sheet status

Objective speciﬁcation

Preliminary speciﬁcation

Product speciﬁcation

This data sheet contains target or goal speciﬁcations for product development.

This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

November 1982

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TDA2611产品参数

型号:	TDA2611
生命周期：	Active
IHS 制造商：	UNISONIC TECHNOLOGIES CO LTD
Reach Compliance Code：	compliant
风险等级：	5.76
Is Samacsys：	N
商用集成电路类型：	AUDIO AMPLIFIER
功能数量：	1
端子数量：	9
最高工作温度：	150 °C
最低工作温度：	-25 °C
封装主体材料：	PLASTIC/EPOXY
封装等效代码：	SIP9,.1TB
电源：	18 V
认证状态：	Not Qualified
子类别：	Audio/Video Amplifiers
表面贴装：	NO
技术：	BIPOLAR
温度等级：	OTHER
端子节距：	2.54 mm
端子位置：	SINGLE
Base Number Matches：	1

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产品型号TDA2611的概述

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