TPS54311, TPS54312
TPS54313, TPS54314
TPS54315, TPS54316
www.ti.com
SLVS416B − FEBRUARY 2002 − REVISED APRIL 2005
values of 4.7 µH to 10 µH are typical and available from
several vendors. The resulting designs exhibit good noise
and ripple characteristics, along with exceptional transient
response. Transient recovery times are typically in the
range of 10 to 20 µs.
turn-on times of the MOSFET drivers. The high-side driver
does not turn on until the gate drive voltage to the low-side
FET is below 2 V. The low-side driver does not turn on until
the voltage at the gate of the high-side MOSFETs is below
2 V. The high-side and low-side drivers are designed with
300-mA source and sink capability to quickly drive the
power MOSFETs gates. The low-side driver is supplied
from VIN, while the high-side drive is supplied from the
BOOT pin. A bootstrap circuit uses an external BOOT
capacitor and an internal 2.5-Ω bootstrap switch
connected between the VIN and BOOT pins. The
integrated bootstrap switch improves drive efficiency and
reduces external component count.
PWM Control
Signals from the error amplifier output, oscillator, and
current limit circuit are processed by the PWM control
logic. Referring to the internal block diagram, the control
logic includes the PWM comparator, OR gate, PWM latch,
and portions of the adaptive dead-time and control logic
block. During steady-state operation below the current
limit threshold, the PWM comparator output and oscillator
pulse train alternately reset and set the PWM latch. Once
the PWM latch is set, the low-side FET remains on for a
minimum duration set by the oscillator pulse duration.
During this period, the PWM ramp discharges rapidly to its
valley voltage. When the ramp begins to charge back up,
the low-side FET turns off and high-side FET turns on. As
the PWM ramp voltage exceeds the error amplifier output
voltage, the PWM comparator resets the latch, thus
turning off the high-side FET and turning on the low-side
FET. The low-side FET remains on until the next oscillator
pulse discharges the PWM ramp.
Overcurrent Protection
The cycle by cycle current limiting is achieved by sensing
the current flowing through the high-side MOSFET and
differential amplifier and comparing it to the preset
overcurrent threshold. The high-side MOSFET is turned
off within 200 ns of reaching the current limit threshold. A
100-ns leading edge blanking circuit prevents false
tripping of the current limit. Current limit detection occurs
only when current flows from VIN to PH when sourcing
current to the output filter. Load protection during current
sink operation is provided by thermal shutdown.
During transient conditions, the error amplifier output
could be below the PWM ramp valley voltage or above the
PWM peak voltage. If the error amplifier is high, the PWM
latch is never reset and the high-side FET remains on until
the oscillator pulse signals the control logic to turn the
high-side FET off and the low-side FET on. The device
operates at its maximum duty cycle until the output voltage
rises to the regulation set-point, setting VSENSE to
Thermal Shutdown
The device uses the thermal shutdown to turn off the power
MOSFETs and disable the controller if the junction
temperature exceeds 150°C. The device is released from
shutdown when the junction temperature decreases to
10°C below the thermal shutdown trip point and starts up
under control of the slow-start circuit. Thermal shutdown
provides protection when an overload condition is
sustained for several milliseconds. With a persistent fault
condition, the device cycles continuously; starting up by
control of the soft-start circuit, heating up due to the fault,
and then shutting down upon reaching the thermal
shutdown point.
approximately the same voltage as V . If the error
ref
amplifier output is low, the PWM latch is continually reset
and the high-side FET does not turn on. The low-side FET
remains on until the VSENSE voltage decreases to a
range that allows the PWM comparator to change states.
The TPS54311 − 16 is capable of sinking current
continuously until the output reaches the regulation
set-point.
Power Good (PWRGD)
If the current limit comparator trips for longer than 100 ns,
the PWM latch resets before the PWM ramp exceeds the
error amplifier output. The high-side FET turns off and
low-side FET turns on to decrease the energy in the output
inductor and consequently the output current. This
process is repeated each cycle in which the current limit
comparator is tripped.
The power good circuit monitors for under voltage
conditions on VSENSE. If the voltage on VSENSE is 10%
below the reference voltage, the open-drain PWRGD
output is pulled low. PWRGD is also pulled low if VIN is
less than the UVLO threshold, or SS/ENA is low, or
thermal shutdown is asserted. When VIN = UVLO
threshold, SS/ENA = enable threshold, and VSENSE >
Dead-Time Control and MOSFET Drivers
90% of V , the open drain output of the PWRGD pin is
ref
Adaptive dead-time control prevents shoot-through
current from flowing in both N-channel power MOSFETs
during the switching transitions by actively controlling the
high. A hysteresis voltage equal to 3% of V and a 35-µs
falling edge deglitch circuit prevent tripping of the power
good comparator due to high frequency noise.
ref
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