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产品型号US5U30TR的Datasheet PDF文件预览

US5U30  
Transistor  
2.5V Drive Pch+SBD MOSFET  
US5U30  
zStructure  
zDimensions (Unit : mm)  
Silicon P-channel MOSFET  
Schottky Barrier DIODE  
TUMT5  
2.0  
1.3  
zFeatures  
1) The US5U30 combines Pch MOSFET with a  
Schottky barrier diode in a TUMT5 package.  
2) Low on-state resistance with fast switching.  
3) Low voltage drive(2.5V)  
4) Built-in schottky barrier diode has low forward voltage.  
Abbreviated symbol : U30  
zApplications  
Load switch, DC/DC conversion  
zPackaging specifications  
zEquivalent circuit  
Package  
Taping  
TR  
(5)  
(4)  
Code  
Type  
Basic ordering unit (pieces)  
3000  
2  
US5U30  
1  
(1)Gate  
(2)Source  
(3)Anode  
(4)Cathode  
(5)Drain  
(1)  
(2)  
(3)  
1 ESD protection diode  
2 Body diode  
Rev.B  
1/4  
US5U30  
Transistor  
zAbsolute maximum ratings (Ta=25°C)  
<MOSFET>  
Parameter  
Drain-source voltage  
Symbol  
Limits  
20  
12  
Unit  
VDSS  
VGSS  
ID  
V
Gate-source voltage  
V
Continuous  
Pulsed  
1
A
Drain current  
1  
1  
3  
IDP  
4
A
Continuous  
Pulsed  
IS  
0.4  
4  
150  
A
Source current  
(Body diode)  
ISP  
A
Channel temperature  
Power dissipation  
Tch  
°C  
P
D
0.7  
W / ELEMENT  
<Di>  
Repetitive peak reverse voltage  
Reverse voltage  
VRM  
VR  
IF  
30  
20  
V
V
Forward current  
0.5  
2
A
2  
3  
Forward current surge peak  
Junction temperature  
Power dissipation  
IFSM  
Tj  
A
150  
0.5  
°C  
P
D
W / ELEMENT  
<MOSFET AND Di>  
3  
Total power dissipation  
PD  
1.0  
W / TOTAL  
Range of Storage temperature  
1 Pw10µs, Duty cycle1% 2 60Hz1cyc. 3 Mounted on a ceramic board  
Tstg  
55 to +150  
°C  
zElectrical characteristics (Ta=25°C)  
<
MOSFET  
>
Parameter  
Symbol Min. Typ. Max.  
Conditions  
VGS= 12V, VDS=0V  
Unit  
µA  
V
I
GSS  
10  
Gate-source leakage  
V
(BR) DSS 20  
I
D=1mA, VGS=0V  
Drain-source breakdown voltage  
Zero gate voltage drain current  
Gate threshold voltage  
I
DSS  
0.7  
280  
310  
570  
1  
2.0  
390  
430  
800  
µA  
V
V
V
DS=20V, VGS=0V  
VGS (th)  
DS=10V, I =1mA  
D
mΩ  
mΩ  
mΩ  
S
I
I
I
D
D
D
=1A, VGS=4.5V  
=1A, VGS=4V  
=0.5A, VGS=2.5V  
Static drain-source on-state  
resistance  
RDS (on)  
Y
fs  
0.7  
VDS=10V, I  
VDS=10V  
VGS=0V  
D=0.5A  
Forward transfer admittance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
C
iss  
150  
20  
20  
9
pF  
pF  
pF  
ns  
Coss  
Crss  
f=1MHz  
t
t
d (on)  
I
V
V
R
R
D
=0.5A  
DD 15V  
t
r
8
ns  
GS=4.5V  
d (off)  
25  
10  
2.1  
0.5  
0.5  
ns  
Turn-off delay time  
Fall time  
L
=30Ω  
=10Ω  
DD 15  
t
f
ns  
G
Q
g
nC  
nC  
nC  
V
V
V
GS=4.5V  
Total gate charge  
Gate-source charge  
Q
gs  
gd  
I
D=1A  
Q
RL=15Ω  
RG=10Ω  
Gate-drain charge  
Pulsed  
<
Body diode (sourcedrain)  
>
Parameter  
Symbol Min. Typ. Max.  
1.2  
Conditions  
IS=0.4A, VGS=0V  
Unit  
V
Forward voltage  
V
SD  
<
Di  
>
Parameter  
Symbol Min. Typ. Max.  
Conditions  
Unit  
V
0.36  
0.47  
100  
I
I
F
=0.1A  
Forward voltage  
Reverse current  
VF  
V
F=0.5A  
I
R
µA  
VR=20V  
Rev.B  
2/4  
US5U30  
Transistor  
zElectrical characteristic curves  
10  
1000  
1000  
V
DS=10V  
V
GS=4.5V  
V
GS=4V  
Pulsed  
Pulsed  
Pulsed  
1
Ta=125°C  
75°C  
25°C  
20°C  
100  
100  
0.1  
Ta=125°C  
75°C  
Ta=125°C  
75°C  
25°C  
25°C  
25°C  
25°C  
0.01  
10  
0.1  
10  
0.1  
0.001  
1
10  
1
10  
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0  
Drain Current : −I [A]  
D
GateSource Voltage : VGS[V]  
Drain Current : −I [A]  
D
Fig.2 Static DrainSource OnState  
Fig.3 Static DrainSource OnState  
Fig.1 Typical Transfer Characteristics  
Resistancevs.Drain Current  
vs.Drain Current  
Resistance  
1000  
1000  
400  
V
GS=2.5V  
Ta=25 C  
Pulsed  
Ta=25 C  
Pulsed  
Pulsed  
350  
300  
250  
200  
150  
I
D=0.75A  
1.5A  
Ta=125°C  
75°C  
100  
100  
25°C  
VGS=2.5V  
4.0V  
4.5V  
25°C  
100  
50  
10  
0.1  
10  
0.1  
0
1
10  
1
10  
0
2
4
6
8
10  
12  
Drain Current : −I [A]  
D
Drain Current : −I [A]  
D
GateSource Voltage : −VGS[V]  
Fig.4 Static DrainSource OnState  
Resistance vs.DrainCurrent  
Fig.6 Static DrainSource OnState  
Fig.5 Static DrainSource OnState  
Resistance vs.Drain Current  
Resistance vs.GateSource Voltage  
10  
1
10000  
1000  
100  
1000  
100  
V
GS=0V  
Ta=25 C  
f=1MHZ  
Ta=25 C  
V
DD=15V  
GS=4.5V  
Pulsed  
VGS=0V  
V
R
G
=10Ω  
Pulsed  
Ta=125°C  
75°C  
t
f
t
d(off)  
25°C  
Ciss  
25°C  
t
d(on)  
0.1  
10  
1
t
r
Coss  
Crss  
0.01  
0
0.5  
100.01  
0.1  
1
10  
100  
0.01  
0.1  
1
10  
2.0  
1.0  
1.5  
SourceDrain Voltage : −VSD[V]  
Drain Current : −I [A]  
D
DrainSource Voltage : −VDS[V]  
Fig.7 Reverse Drain Current  
vs. Source-Drain Current  
Fig.8 Typical Capactitance  
vs.DrainSource Voltage  
Fig.9 Switching Characteristics  
Rev.B  
3/4  
US5U30  
Transistor  
8
7
6
1000  
100  
100  
10  
1
Ta=25 C  
Ta=125°C  
75°C  
V
DD=15V  
=2.5A  
=10Ω  
125°C  
75°C  
I
D
25°C  
RG  
25°C  
Pulsed  
5
4
3
2
0.1  
10  
25°C  
0.01  
1
25°C  
0.001  
1
0
0.1  
0.0001  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0
10  
20  
30  
40  
0
1
2
3
4
5
6
Forward Voltage :V  
F
[V]  
Reverse Voltage : V  
R[V]  
Total Gate Charge : Qg[nC]  
Fig.11 Forward Temperature Characteristics Fig.12 Reverse Temperature Characteristics  
Fig.10 Dynamic Input Characteristics  
zMeasurement circuits  
Pulse Width  
V
GS  
10%  
50%  
50%  
90%  
10%  
10%  
V
GS  
I
D
V
DS  
90%  
90%  
VDS  
RL  
D.U.T.  
RG  
V
DD  
t
d(on)  
t
r
t
d(off)  
t
f
t
on  
t
off  
Fig.14 Switching Waveforms  
Fig.13 Switching Time Measurement Circuit  
V
G
Qg  
V
GS  
I
D
VDS  
V
GS  
Qgs  
Qgd  
IG(Const)  
RL  
D.U.T.  
RG  
V
DD  
Charge  
Fig.16 Gate Charge Waveforms  
Fig.15 Gate Charge Measurement Circuit  
Rev.B  
4/4  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.1  
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