VN610SPTR-E应用文章市场行情现货热卖使用介绍供应商报价-中国IC网-芯三七

当前位置：IC37首页_>V字母起始型号索引_>V字母起始型号索引第268页更新时间：2024-10-25 17:35:56

产品型号VN610SPTR-E的概述

芯片VN610SPTR-E的概述 VN610SPTR-E是一款高性能的功率驱动芯片，主要应用于各类电机控制、电源管理及自动化设备中。作为一款集成电路，其设计目标在于为用户提供高效、稳定的电流驱动解决方案。VN610SPTR-E采用了先进的半导体技术，使其具备了优秀的热管理能力和响应速度，因而广泛应用于家电、工业自动化以及机器人等领域中。该芯片采用了单片结构，集成了多个功能模块，旨在简化外部电路设计并提高系统整体的可靠性。VN610SPTR-E的工作电压范围较宽，可兼容多个供电来源，为各种应用场合提供了灵活性。它的主要功能包括功率开关、PWM（脉宽调制）调速控制、热保护以及短路保护等。芯片VN610SPTR-E的详细参数 VN610SPTR-E具有以下关键参数： - 工作电压范围：8V至36V - 最大持续输出电流：8A（工作时） - 导通电阻：0.20Ω（典型值） - 开关频率：可...

产品型号VN610SPTR-E的Datasheet PDF文件预览

VN610SP-E

SINGLE CHANNEL HIGH SIDE DRIVER

Figure 1. Package

Table 1. General Features

Type

DS(on)

out

VN610SP-E

10 mΩ

45 A

36 V

■OUTPUT CURRENT: 45 A

■ CMOS COMPATIBLE INPUT

■ PROPORTIONAL LOAD CURRENT SENSE

■ UNDERVOLTAGE AND OVERVOLTAGE

SHUT-DOWN

■ OVERVOLTAGE CLAMP

■ THERMAL SHUT DOWN

■ CURRENT LIMITATION

PowerSO-10™

■ VERY LOW STAND-BY POWER DISSIPATION

■ PROTECTION AGAINST:

LOSS OF GROUND AND LOSS OF V

■ REVERSE BATTERY PROTECTION (*)

■ IN COMPLIANCE WITH THE 2002/95/EC

EUROPEAN DIRECTIVE

DESCRIPTION

This device integrates an analog current sense

which delivers a current proportional to the load

current (according to a known ratio). Active current

limitation combined with thermal shut-down and

automatic restart protect the device against

overload. Device automatically turns off in case of

ground pin disconnection.

The VN610SP-E is a monolithic device made

using

STMicroelectronics

VIPower

M0-3

technology. It is intended for driving resistive or

inductive loads with one side connected to ground.

Active V

pin voltage clamp protects the device

against low energy spikes (see ISO7637 transient

compatibility table).

Table 2. Order Codes

Package

Tube

Tape and Reel

PowerSO-10™

VN610SP-E

VN610SPTR-E

Note: (*) See application schematic at page 9

Rev. 1

1/18

October 2004

VN610SP-E

Figure 2. Block Diagram

OVERVOLTAGE

UNDERVOLTAGE

CLAMP

PwCLAMP

DRIVER

OUTPUT

GND

LIM

DSLIM

LOGIC

OUT

CURRENT

SENSE

INPUT

OVERTEMP.

Table 3. Absolute Maximum Ratings

Symbol

Parameter

Value

Unit

DC supply voltage

-V

Reverse DC supply voltage

DC reverse ground pin current

DC output current

-0.3

-200

- I

GND

Internally limited

OUT

- I

Reverse DC output current

DC input current

-50

OUT

+/- 10

-3

Current sense maximum voltage

CSENSE

+15

Electrostatic Discharge (Human Body Model:

R=1.5KΩ; C=100pF)

4000

2000

5000

- INPUT

ESD

- CURRENT SENSE

- OUTPUT

- V

Maximum Switching Energy

(L=0.05mH; R =0Ω; V =13.5V; T =150ºC;

jstart

MAX

193

bat

I =75A)

Power dissipation at T <25°C

139

°C

tot

Junction operating temperature

Case operating temperature

Storage temperature

Internally limited

-40 to 150

-55 to 150

STG

2/18

VN610SP-E

Figure 3. Configuration Diagram (Top View) & Suggested Connections for Unused and N.C. Pins

OUTPUT

GROUND

INPUT

C.SENSE

N.C.

V_CC

Connection / Pin

Current Sense

N.C.

Output

Input

Floating

Through

1KΩresistor

To Ground

Through 10KΩ resistor

Figure 4. Current and Voltage Conventions

OUT

OUTPUT

OUT

INPUT

SENSE

CURRENT SENSE

GND

SENSE

GND

Table 4. Thermal Data

Symbol

Parameter

Value

Unit

°C/W

Thermal resistance junction-case

(MAX)

0.9

thj-case

50.9 ( )

Thermal resistance junction-ambient

(MAX)

thj-amb

36( )

(1)

Note:

When mounted on a standard single-sided FR-4 board with 0.5cm of Cu (at least 35µm thick).

(2)

When mounted on a standard single-sided FR-4 board with 6 cm of Cu (at least 35µm thick).

3/18

VN610SP-E

ELECTRICAL CHARACTERISTICS

(8V<V <36V; -40°C<T <150°C; unless otherwise specified)

(Per each channel)

Table 5. Power

Symbol

Parameter

Test Conditions

Min.

5.5

Typ.

Max.

Unit

Operating supply voltage

Undervoltage shutdown

Overvoltage shutdown

USD

5.5

(See Note 1)

=15A; T =25°C

mΩ

OUT

On state resistance

Clamp Voltage

=15A; T =150°C

=9A; V =6V

clamp

=20 mA (see note 1)

Off State; V =13V; V =V

=0V

OUT

µA

Off State; V =13V; V =V

=0V;

OUT

Supply current

T =25°C

µA

On State; V =13V; V =5V; I =0A

OUT

=3.9K

SENSE

Off State Output Current

V =V =0V

OUT

µA

L(off1)

L(off2)

L(off3)

L(off4)

V =0V; V

=3.5V

-75

OUT

V =V

=0V; V =13V; T =125°C

OUT

V =V

=0V; V =13V; T =25°C

OUT

Note: 1. V

and V are correlated. Typical difference is 5V.

clamp

Table 6. Protection (see note 2)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

=13V

120

lim

DC Short circuit current

5.5V<V <36V

Thermal shutdown

temperature

150

175

200

°C

TSD

Thermal reset tempera-

ture

135

°C

Thermal hysteresis

HYST

=2A; V =0; L=6mH

Turn-off output voltage

clamp

OUT

-41

-48

V -55

DEMAG

Output voltage drop limi-

tation

=1.5A; T = -40°C...+150°C

OUT

Note: 2. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be

used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration

and number of activation cycles

Table 7. V - Output Diode

Symbol

Parameter

Test Conditions

=8A; T =150°C

Min

Typ

Max

Unit

Forward on Voltage

-I

0.6

OUT

4/18

VN610SP-E

ELECTRICAL CHARACTERISTICS (continued)

Table 8. Current Sense (9V≤V_CC≤16V) (See Figure 5)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

=1.5A; V

=0.5V;

OUT

SENSE

3300

4400

6000

OUT SENSE

T = -40°C...150°C

=1.5A; V

=0.5V;

OUT

SENSE

dK₁/K₁

Current Sense Ratio Drift

I /I

OUT SENSE

-10

+10

T = -40°C...150°C

=15A; V

=4V; T=-40°C

4200

4400

4900

6000

5750

OUT

SENSE

T =25°C...150°C

=15A; V

=4V; T=-40°C

OUT

SENSE j

dK₂/K₂

Current Sense Ratio Drift

I /I

OUT SENSE

-6

T =25°C...150°C

=45A; V

=4V; T=-40°C

4200

4400

4900

5500

5250

OUT

SENSE

T =25°C...150°C

=45A; V

=4V; T=-40°C

OUT

SENSE j

dK₃/K₃

Current Sense Ratio Drift

Analog sense current

-6

T =25°C...150°C

Vcc=6...16V; I

40°C...150°C

=0A; V

=0V; Tj=-

OUT

SENSE

SENSE0

Off State; V =0V

µA

On State; V =5V

Max analog sense

output voltage

=5.5V; I

=7.5A; R =10KΩ

SENSE

3.5

OUT

SENSE

>8V; I

=15A; R =10KΩ

SENSE

OUT

Analog sense output

voltage in overtemperature

condition

=13V; R =3.9KΩ

SENSE

5.5

SENSEH

Analog sense output

impedance in

=13V; T >T ; Output Open

TSD

400

Ω

VSENSEH

overtemperature condition

Current sense delay

reponse

to 90% I

(see note 3)

500

µs

DSENSE

SENSE

Note: 3. Current sense signal delay after positive input slope.

Table 9. Switching (V =13V)

Symbol

Parameter

Turn-on delay time

Turn-off delay time

Test Conditions

Min

Typ

Max

Unit

µs

R =0.87Ω

d(on)

d(off)

R =0.87Ω

See

(dV

/dt)

Turn-on voltage slope

Turn-off voltage slope

R =0.87Ω

relative

V/µs

OUT

off

diagram

See

/dt)

R =0.87Ω

relative

diagram

5/18

VN610SP-E

Table 10. Logic Input

Symbol

Parameter

Input low level voltage

Test Conditions

Min

Typ

Max

Unit

1.25

Low level input current V =1.25V

µA

Input high level voltage

3.25

High level input current V =3.25V

µA

Input hysteresis voltage

0.5

I(hyst)

I =1mA

6.8

Input clamp voltage

ICL

I =-1mA

-0.7

Figure 5.

I_OUT/I_SENSE

6500

6000

5500

5000

4500

4000

3500

3000

max.Tj=-40°C

max.Tj=25...150°C

min.Tj=25...150°C

typical value

min.Tj=-40°C

I_OUT

Table 11. Truth Table

CONDITIONS

INPUT

OUTPUT

SENSE

Normal operation

Overtemperature

Undervoltage

Nominal

SENSEH

Overvoltage

Short circuit to GND

(T <T

) 0

) V

TSD

(T >T

SENSEH

Short circuit to V

< Nominal

Negative output voltage

clamp

6/18

VN610SP-E

Figure 6. Switching Characteristics (Resistive load R =0.87Ω)

OUT

90%

80%

dV /dt

OUT (off)

dV /dt

OUT (on)

10%

SENSE

90%

DSENSE

INPUT

d(on)

d(off)

Table 12. Electrical Transient Requirements On V

ISO T/R 7637/1

TEST LEVELS

III

Delays and

Impedance

Test Pulse

-25 V

+25 V

-25 V

-50 V

+50 V

-50 V

-75 V

+75 V

-100 V

+75 V

-6 V

-100 V

+100 V

-150 V

+100 V

-7 V

2 ms 10 Ω

0.2 ms 10 Ω

0.1 µs 50 Ω

100 ms, 0.01 Ω

400 ms, 2 Ω

+25 V

-4 V

+50 V

-5 V

+26.5 V

+46.5 V

+66.5 V

+86.5 V

ISO T/R 7637/1

Test Pulse

TEST LEVELS RESULTS

III

CLASS

CONTENTS

All functions of the device are performed as designed after exposure to disturbance.

One or more functions of the device is not performed as designed after exposure to disturbance

and cannot be returned to proper operation without replacing the device.

7/18

VN610SP-E

Figure 7. Waveforms

NORMAL OPERATION

INPUT

LOAD CURRENT

SENSE CURRENT

UNDERVOLTAGE

V_USDhyst

V_USD

INPUT

LOAD CURRENT

SENSE CURRENT

OVERVOLTAGE

V_OV

V_CC> V_USD

V_OVhyst

INPUT

LOAD CURRENT

SENSE

SHORT TO GROUND

INPUT

LOAD CURRENT

LOAD VOLTAGE

SENSE CURRENT

SHORT TO V

INPUT

LOAD VOLTAGE

LOAD CURRENT

SENSE CURRENT

<Nominal

OVERTEMPERATURE

T_TSD

T_R

INPUT

LOAD CURRENT

SENSE CURRENT

SENSE

/(R

SENSEH

SENSE

)

SENSEH

8/18

VN610SP-E

Figure 8. Application Schematic

+5V

prot

INPUT

prot

µC

OUTPUT

CURRENT SENSE

SENSE

GND

This small signal diode can be safely shared amongst

several different HSD. Also in this case, the presence of

the ground network will produce a shift ( 600mV) in the

input threshold and the status output values if the

microprocessor ground is not common with the device

ground. This shift will not vary if more than one HSD

shares the same diode/resistor network.

Series resistor in INPUT line is also required to prevent

that, during battery voltage transient, the current exceeds

the Absolute Maximum Rating.

Safest configuration for unused INPUT pin is to leave it

unconnected, while unused SENSE pin has to be

connected to Ground pin.

GND PROTECTION NETWORK AGAINST

REVERSE BATTERY

Solution 1: Resistor in the ground line (R

can be used with any type of load.

only). This

GND

The following is an indication on how to dimension the

resistor.

GND

1) R

2) R

≤ 600mV / (I

GND

S(on)max

≥ (−V ) / (-I

)

GND

where -I

is the DC reverse ground pin current and can

GND

be found in the absolute maximum rating section of the

device’s datasheet.

LOAD DUMP PROTECTION

Power Dissipation in R

(when V <0: during reverse

GND

battery situations) is:

is necessary (Voltage Transient Suppressor) if the

load dump peak voltage exceeds V

max DC rating.

P = (-V ) /R

GND

The same applies if the device will be subject to

transients on the V

shown in the ISO T/R 7637/1 table.

This resistor can be shared amongst several different

HSD. Please note that the value of this resistor should be

line that are greater than the ones

calculated with formula (1) where I

becomes the

S(on)max

µC I/Os PROTECTION:

sum of the maximum on-state currents of the different

devices.

If a ground protection network is used and negative

Please note that if the microprocessor ground is not

transients are present on the V line, the control pins will

common with the device ground then the R

will

be pulled negative. ST suggests to insert a resistor (R

in line to prevent the µC I/Os pins to latch-up.

)

GND

prot

produce a shift (I

* R

) in the input thresholds

GND

S(on)max

and the status output values. This shift will vary

The value of these resistors is a compromise between the

leakage current of µC and the current required by the

HSD I/Os (Input levels compatibility) with the latch-up

limit of µC I/Os.

depending on how many devices are ON in the case of

several high side drivers sharing the same R

GND

If the calculated power dissipation leads to a large

resistor or several devices have to share the same

resistor then the ST suggests to utilize Solution 2 (see

below).

-V

≤ R

≤ (V

-V -V

OHµC IH GND

) / I

CCpeak latchup

prot

IHmax

Calculation example:

For V

= - 100V and I

≥ 20mA; V

≥ 4.5V

CCpeak

latchup

OHµC

Solution 2: A diode (D

) in the ground line.

GND

5kΩ ≤ R

≤ 65kΩ.

prot

A resistor (R

GND

=1kΩ) should be inserted in parallel to

GND

if the device will be driving an inductive load.

Recommended R

value is 10kΩ.

prot

9/18

VN610SP-E

Figure 9. Off State Output Current

Figure 10. High Level Input Current

IL(off1) (µA)

Iih (uA)

4.5

Vin=3.25V

Off state

Vcc=36V

Vin=Vout=0V

3.5

2.5

1.5

0.5

-50

-25

100

125

150

175

-50

-25

100

125

150

175

Tc (°C)

Figure 11. Input Low Level

Figure 13. Input High Level

Vil (V)

Vih (V)

3.6

2.6

2.4

2.2

3.4

3.2

1.8

1.6

1.4

1.2

2.8

2.6

2.4

2.2

-50

-25

100

125

150

175

-50

-25

100

125

150

175

Tc (°C)

Figure 12. Input Clamp Voltage

Figure 14. Input Hysteresis Voltage

Vhyst (V)

Vicl (V)

1.5

1.4

1.3

1.2

1.1

7.8

Iin=1mA

7.6

7.4

7.2

0.9

0.8

0.7

0.6

0.5

6.8

6.6

6.4

6.2

-50

-25

100

125

150

175

-50

-25

100

125

150

175

Tc (°C)

10/18

VN610SP-E

Figure 15. Overvoltage Shutdown

Figure 18. I Vs T

LIM case

Vov (V)

Ilim (A)

160

140

120

100

Vcc=13V

-50

-25

100

125

150

175

-50

-25

100

125

150

175

Tc (°C)

Tc (ºC)

Figure 16. Turn-on Voltage Slope

Figure 19. Turn-off Voltage Slope

dVout/dt(on) (V/ms)

dVout/dt(off) (V/ms)

900

700

650

800

Vcc=13V

Rl=0.87Ohm

Vcc=13V

Rl=0.87Ohm

600

700

550

500

450

400

350

300

250

600

500

400

300

200

100

-50

-25

100

125

150

-50

-25

100

125

150

175

Tc (ºC)

Figure 17. On State Resistance Vs T

Figure 20. On State Resistance Vs V

case

Ron (mOhm)

22.5

Iout=15A

Vcc=8V; 36V

Tc= 125ºC

17.5

12.5

Tc= 25ºC

7.5

Tc= - 40ºC

2.5

-50

-25

100 125 150

Tc (ºC)

Vcc (V)

11/18

VN610SP-E

Figure 21. Maximum turn off current versus load inductance

LMAX (A)

1000

100

0.01

0.1

100

L(mH)

A = Single Pulse at T

=150ºC

Values are generated with R =0Ω

Jstart

B= Repetitive pulse at T

=100ºC

Jstart

In case of repetitive pulses, T

(at beginning of

jstart

each demagnetization) of every pulse must not

exceed the temperature specified above for

curves B and C.

C= Repetitive Pulse at T

=125ºC

Jstart

Conditions:

=13.5V

V , I

Demagnetization

12/18

VN610SP-E

PowerSO-10™ Thermal Data

Figure 22. PowerSO-10™ PC Board

Layout condition of R and Z measurements (PCB FR4 area= 58mm x 58mm, PCB thickness=2mm,

Cu thickness=35µm, Copper areas: from minimum pad lay-out to 8cm ).

Figure 23. R

Vs PCB copper area in open box free air condition

thj-amb

RTHj_amb (°C/W)

Tj-Tamb=50°C

PCB Cu heatsink area (cm^2)

13/18

VN610SP-E

Figure 24. PowerSO-10 Thermal Impedance Junction Ambient Single Pulse

ZTH (°C/W)

100

Footprint

6 cm

0.1

0.01

0.0001

0.001

0.01

0.1

100

1000

Time (s)

Figure 25. Thermal fitting model of a double

channel HSD in PowerSO-10

Pulse calculation formula

Z_THδ= R_THδ + Z_THtp(1 – δ)

δ = t_p⁄ T

where

Table 13. Thermal Parameter

Area/island (cm )

Footprint

Tj_1

R1 (°C/W)

0.05

0.3

R2 (°C/W)

R3( °C/W)

R4 (°C/W)

R5 (°C/W)

R6 (°C/W)

C1 (W.s/°C)

C2 (W.s/°C)

C3 (W.s/°C)

C4 (W.s/°C)

C5 (W.s/°C)

C6 (W.s/°C)

Pd1

0.3

Tj_2

0.8

Pd2

0.001

T_amb

5.00E-03

0.02

0.3

0.75

14/18

VN610SP-E

PACKAGE MECHANICAL

Table 14. PowerSO-10™ Mechanical Data

millimeters

Typ

Symbol

Min

Max

A (*)

B (*)

C (*)

E2 (*)

E4 (*)

F (*)

3.35

3.4

3.65

3.6

0.00

0.40

0.37

0.35

0.23

9.40

7.40

9.30

7.20

7.30

5.90

0.10

0.60

0.53

0.55

0.32

9.60

7.60

9.50

7.60

7.50

6.10

6.30

1.27

0.50

1.25

1.20

13.80

13.85

1.35

1.40

14.40

14.35

H (*)

L (*)

1.20

0.80

0º

1.80

1.10

8º

α (*)

2º

8º

Note: (*) Muar only POA P013P

Figure 26. PowerSO-10™ Package Dimensions

0.10

A B

SEATING

PLANE

DETAIL "A"

0.25

SEATING

PLANE

DETAIL "A"

P095A

15/18

VN610SP-E

Figure 27. PowerSO-10™ Suggested Pad Layout and Tube Shipment (no suffix)

CASABLANCA

MUAR

14.6 - 14.9

10.8 - 11

6.30

0.67 - 0.73

0.54 - 0.6

9.5

All dimensions are in mm.

Base Q.ty Bulk Q.ty Tube length (± 0.5)

1.27

C (± 0.1)

Casablanca

Muar

1000

532

10.4 16.4

4.9 17.2

0.8

Figure 28. Tape And Reel Shipment (suffix “TR”)

REEL DIMENSIONS

Base Q.ty

Bulk Q.ty

A (max)

B (min)

C (± 0.2)

600

330

1.5

20.2

24.4

G (+ 2 / -0)

N (min)

T (max)

30.4

All dimensions are in mm.

TAPE DIMENSIONS

According to Electronic Industries Association

(EIA) Standard 481 rev. A, Feb. 1986

Tape width

P0 (± 0.1)

Tape Hole Spacing

Component Spacing

Hole Diameter

D (± 0.1/-0) 1.5

Hole Diameter

D1 (min)

F (± 0.05)

K (max)

1.5

11.5

6.5

Hole Position

Compartment Depth

Hole Spacing

P1 (± 0.1)

End

All dimensions are in mm.

Start

Top

No components

500mm min

Components

No components

cover

tape

Empty components pockets

saled with cover tape.

500mm min

User direction of feed

16/18

VN610SP-E

REVISION HISTORY

Date

Revision

Description of Changes

Oct. 2004

- First Issue.

17/18

VN610SP-E

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences

of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted

by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject

to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not

authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics.

All other names are the property of their respective owners

STMicroelectronics group of companies

Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -

Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America

www.st.com

18/18

VN610SPTR-E相关文章

配单直通车

深圳市芯福林电子有限公司服务专线: 13418564337 在线联系:

QQ：2881495808 复制

QQ：308365177 复制

首天国际（深圳）科技有限公司服务专线: 0755-82807802/82807803 在线联系:

QQ：528164397 复制

QQ：1318502189 复制

北京元坤伟业科技有限公司服务专线: 010-62104931621064316210489162104791 在线联系:

QQ：857273081 复制

QQ：1594462451 复制

深圳市中利达电子科技有限公司服务专线: 0755-83200645/13686833545 在线联系:

QQ：1902134819 复制

QQ：2881689472 复制

柒号芯城电子商务（深圳）有限公司服务专线: 0755-83209937 在线联系:

QQ：2881677436 复制

QQ：2881620402 复制

VN610SPTR-E产品参数

型号:	VN610SPTR-E
Brand Name：	STMicroelectronics
是否Rohs认证：	符合
生命周期：	Obsolete
IHS 制造商：	STMICROELECTRONICS
零件包装代码：	SOIC
包装说明：	HSOP, SOP10,.55FL
针数：	10
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
HTS代码：	8542.39.00.01
Factory Lead Time：	20 weeks 1 day
风险等级：	7.97
Is Samacsys：	N
内置保护：	TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE
驱动器位数：	1
接口集成电路类型：	BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码：	R-PDSO-G10
JESD-609代码：	e3
长度：	9.4 mm
湿度敏感等级：	3
功能数量：	1
端子数量：	10
输出电流流向：	SINK
最大输出电流：	45 A
封装主体材料：	PLASTIC/EPOXY
封装代码：	HSOP
封装等效代码：	SOP10,.55FL
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, HEAT SINK/SLUG
峰值回流温度（摄氏度）：	NOT SPECIFIED
电源：	8/36 V
认证状态：	Not Qualified
座面最大高度：	3.75 mm
子类别：	Peripheral Drivers
最大供电电压：	36 V
最小供电电压：	5.5 V
标称供电电压：	13 V
表面贴装：	YES
端子面层：	Matte Tin (Sn) - annealed
端子形式：	GULL WING
端子节距：	1.27 mm
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	7.5 mm
Base Number Matches：	1

电子百科

产品导航

产品型号VN610SPTR-E的概述

产品型号VN610SPTR-E的Datasheet PDF文件预览

VN610SPTR-E相关产品

VN610SPTR-E相关文章

IC37:专业IC行业平台