AP4503GM
P-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Test Conditions
V
GS
=0V, I
D
=-250uA
Reference to 25℃,I
D
=-1mA
V
GS
=-10V, I
D
=-6A
V
GS
=-4.5V, I
D
=-4A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-6A
V
DS
=-30V, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
GS
=±20V
I
D
=-6A
V
DS
=-24V
V
GS
=-4.5V
V
DS
=-15V
I
D
=-1A
R
G
=3.3Ω,V
GS
=-10V
R
D
=15Ω
V
GS
=0V
V
DS
=-25V
f=1.0MHz
2
Min.
-30
-
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.004
Max. Units
-
-
36
55
-3
-
-1
-25
±100
24
-
-
-
-
-
-
1540
-
-
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (
T
j
=25
o
C)
Drain-Source Leakage Current (
T
j
=70
o
C)
-
-
-
5.8
-
-
-
9
2
5
12
8
42
34
960
300
220
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
V
SD
I
S
t
rr
Q
rr
Parameter
Forward On Voltage
2
Test Conditions
I
S
=-6A, V
GS
=0V
V
D
=V
G
=0V , V
S
=-1.2V
I
S
=-6A, V
GS
=0V
dI/dt=-100A/µs
Min.
-
-
-
-
Typ.
-
-
24
18
Max. Units
-1.2
-1.7
-
-
V
A
ns
nC
Continuous Source Current ( Body Diode )
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 135℃/W when mounted on min. copper pad.
3/7
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
