AP4503GM
N-Channel
100
70
T
A
=25
o
C
80
10V
I
D
, Drain Current (A)
60
T
A
=150
o
C
10V
7.0V
I
D
, Drain Current (A)
50
60
7.0V
40
30
40
5.0V
4.5V
20
5.0V
4.5V
20
V
G
=3.0V
0
10
V
G
=3.0V
0
0
1
2
3
4
5
6
7
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
42
1.8
I
D
=6A
38
T
A
=25
o
C
Normalized R
DS(ON)
1.6
I
D
=6A
V
G
=10V
34
1.4
R
DS(ON)
(m
Ω
)
30
1.2
26
1.0
-6.3
-5
22
0.8
18
3
5
7
9
11
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
,Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
7
6
1.5
5
I
S
(A)
4
V
GS(th)
(V)
1.2
1
3
T
j
=150
o
C
2
T
j
=25
o
C
0.5
1
0
0
0.2
0.4
0.6
0.8
1
0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
,Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4/7
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
