AP4503GM
N-Channel
f=1.0MHz
12
10000
V
GS
, Gate to Source Voltage (V)
10
I
D
=6A
V
DS
=24V
1000
8
▼
Fast Switching Performance
6
4
C (pF)
Ciss
100
Coss
Crss
2
0
0
4
8
12
16
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thja
)
Dity factor=0.5
10
0.2
100us
0.1
0.1
0.05
I
D
(A)
1
1ms
10ms
0.02
0.01
P
DM
0.01
Single Pulse
0.1
T
A
=25
o
C
Single Pulse
0.01
100ms
1s
10s
DC
1
10
100
-6.3
-5
0.1
1
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
Rthja=135 C/W
o
0.001
0.1
0.0001
0.001
0.01
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
5/7
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