AP4503GM
P-Channel
f=1.0MHz
12
10000
1000
100
I D =-6A
V
DS =-24V
10
8
Ciss
Coss
Crss
6
4
2
0
10
0.0
5.0
10.0
15.0
20.0
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
0.2
0.1
10
1ms
0.1
0.05
1
10ms
0.02
0.01
PDM
100ms
0.01
-6.3
Single Pulse
t
T
T A =25 o C
0.1
1s
10s
DC
-5
Duty factor = t/T
Single Pulse
Peak Tj = PDM x Rthja + Ta
Rthja=135oC/W
0.01
0.001
0.0001
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS
VG
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(off)
tr
td(on)
tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
7/7
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
