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APT30GT60BRDQ2G 参数 Datasheet PDF下载

APT30GT60BRDQ2G图片预览
型号: APT30GT60BRDQ2G
PDF下载: 下载PDF文件 查看货源
内容描述: 迅雷IGBT [Thunderbolt IGBT]
分类和应用: 晶体晶体管双极性晶体管
文件页数/大小: 9 页 / 437 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
t
d(on)
t
d(off)
t
f
E
on1
E
on2
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
E
off
t
r
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
APT30GT60BRDQ2(G)
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
CE
= 300V
I
C
= 30A
T
J
= 150°C, R
G
= 10Ω, V
GE
=
15V, L = 100µH,V
CE
= 600V
Inductive Switching (25°C)
V
CC
= 400V
V
GE
= 15V
R
G
= 10Ω
I
C
= 30A
V
GE
= 15V
MIN
TYP
MAX
UNIT
pF
V
nC
1600
155
90
7.5
145
10
60
110
12
20
225
80
525
605
600
12
20
245
100
570
965
830
µ
J
ns
ns
A
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
4
4
55
4
5
Turn-on Switching Energy (Diode)
6
T
J
= +25°C
Inductive Switching (125°C)
V
CC
= 400V
V
GE
= 15V
R
G
= 10Ω
I
C
= 30A
µ
J
Turn-on Switching Energy (Diode)
6
T
J
= +125°C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
R
θ
JC
R
θ
JC
W
T
Characteristic
Junction to Case
(IGBT)
Junction to Case
(DIODE)
Package Weight
MIN
TYP
MAX
UNIT
°C/W
gm
.50
.67
5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces
includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E
on1
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
12-2005
Rev A
5 E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6282