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APT30GT60BRDQ2G 参数 Datasheet PDF下载

APT30GT60BRDQ2G图片预览
型号: APT30GT60BRDQ2G
PDF下载: 下载PDF文件 查看货源
内容描述: 迅雷IGBT [Thunderbolt IGBT]
分类和应用: 晶体晶体管双极性晶体管
文件页数/大小: 9 页 / 437 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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TYPICAL PERFORMANCE CURVES
100
V
90
I
C
, COLLECTOR CURRENT (A)
80
70
60
50
40
30
20
10
0
GE
= 15V
140
120
APT30GT60BRDQ2(G)
15 &13V
I
C
, COLLECTOR CURRENT (A)
T
J
= -55°C
11V
100
80
60
40
20
0
10V
9V
8V
7V
6V
0
5
10
15
20
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
I = 30A
C
T = 25°C
J
T
J
= 25°C
T
J
= 125°C
100
FIGURE 1, Output Characteristics(T
J
= 25°C)
250µs PULSE
TEST<0.5 % DUTY
CYCLE
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
16
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
14
12
10
FIGURE 2, Output Characteristics (T
J
= 125°C)
90
I
C
, COLLECTOR CURRENT (A)
80
70
60
50
40
30
20
10
0
0
T
J
= -55°C
V
CE
= 120V
V
CE
= 300V
8
6
4
2
0
0
20
40 60 80 100 120 140 160
GATE CHARGE (nC)
FIGURE 4, Gate Charge
V
CE
= 480V
T
J
= 125°C
T
J
= 25°C
2
4
6
8
10
12
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
I
C
= 60A
T
J
= 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
4.5
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
V
GE
= 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
C
= 60A
I
C
= 30A
I
C
= 15A
I
C
= 30A
I
C
= 15A
8
10
12
14
16
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.15
0
6
25
50
75
100
125
150
T
J
, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
90
1.05
1.00
0.95
0.90
0.85
0.80
0.75
I
C,
DC COLLECTOR CURRENT(A)
V
GS(TH)
, THRESHOLD VOLTAGE
(NORMALIZED)
1.10
80
70
60
50
40
30
20
10
-25
0
25 50 75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
0
-50
12-2005
052-6282
Rev A
0.70
-50 -25
0
25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature