APM2801B
Absolute Maximum Ratings
Symbol
[MOSFET]
V
DSS
V
GSS
I
D
I
DM
I
S
T
J
T
STG
P
D
R
θ
JA
*
[SBD]
V
RRM
I
FSM
Note:
*Surface Mounted on 1in2 pad area, t
≤
10sec.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
300µs Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
T
A
=25°C
T
A
=100°C
V
GS
=-4.5V
-20
±10
-1.5
-6
-1
150
-55 to 150
0.83
0.3
150
W
°C/W
V
A
A
°C
(T
A
= 25°C unless otherwise noted)
Parameter
Rating
Unit
Repetitive Peak Reverse Voltage
Maximum Peak Forward Surge Current
20
5.5
V
A
Electrical Characteristics
Symbol
[MOSFET]
Static Characteristics
Parameter
(T
A
= 25°C unless otherwise noted)
APM2801B
Min.
Typ.
Max.
Test Condition
Unit
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V, I
DS
=-250µA
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
V
SDa
a
-20
-1
-30
-0.45
-0.6
145
180
-0.7
-1
±100
190
235
-1.3
V
µ
A
V
nA
mΩ
V
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
Diode Forward Voltage
V
DS
=-16V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=-250
µ
A
V
GS
=±10V, V
DS
=0V
V
GS
=-4.5V, I
DS
=-1.5A
V
GS
=-2.5V, I
DS
=-1A
I
SD
=-0.5A , V
GS
=0V
Copyright
©
ANPEC Electronics Corp.
Rev. B.4 - Jun., 2005
2
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
