APM2801B
Typical Characteristics (Cont.)
Drain-Source On Resistance
1.8
V
GS
= -4.5V
1.6
I
DS
= -1.5A
T
j
=150 C
o
Source-Drain Diode Forward
6
Normalized On Resistance
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
R
ON
@T
j
=25 C: 145m
Ω
0
25
50
75 100 125 150
o
-I
S
- Source Current (A)
1
T
j
=25 C
o
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
T
j
- Junction Temperature (°C)
-V
SD
- Source - Drain Voltage (V)
Capacitance
500
Frequency=1MHz
5
V
DS
=-10 V
I
DS
=-1.5 A
4
Gate Charge
400
Ciss
300
-V
GS
- Gate - source Voltage (V)
C - Capacitance (pF)
3
200
2
100
Coss
Crss
0
1
0
0
4
8
12
16
20
0
1
2
3
4
5
-V
DS
- Drain - Source Voltage (V)
Q
G
- Gate Charge (nC)
Copyright
©
ANPEC Electronics Corp.
Rev. B.4 - Jun., 2005
6
www.anpec.com.tw