APM2801B
Electrical Characteristics (Cont.)
Symbol
[MOSFET]
Dynamic Characteristics
b
C
iss
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
Q
g
Q
gs
Q
gd
[SBD]
V
R
V
F1
V
F2
I
R
C
b
(T
A
= 25°C unless otherwise noted)
APM2801B
Min.
Typ.
Max.
Parameter
Test Condition
Unit
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
GS
=0V,
V
DS
=-20V,
Frequency=1.0MHz
V
DD
=-10V, R
L
=10
Ω
,
I
DS
=-1A, V
GEN
=-4.5V,
R
G
=6
Ω
255
70
45
6
8
9.8
5
10
12
15
10
ns
pF
Gate Charge Characteristics
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=-10V, V
GS
=-4.5V,
I
DS
=-1.5A
4
0.6
0.7
6
nC
Reverse Voltage
Forward Voltage
Reverse Current
Junction Capacitance
I
R
=0.5mA
I
F
=10mA
I
F
=500mA
V
R
=15V
V
R
=10V,
Frequency=1.0MHz
20
0.4
0.5
200
45
V
V
V
µA
pF
Notes:
a : Pulse test ; pulse width
≤
300µs, duty cycle
≤
2%.
b : Guaranteed by design, not subject to production testing.
Copyright
©
ANPEC Electronics Corp.
Rev. B.4 - Jun., 2005
3
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
