APM3020P
P-Channel Enhancement Mode MOSFET
Features
•
•
•
•
-30V/-11A, R
DS(ON)
= 17mΩ(typ.) @ V
GS
= -10V
R
DS(ON)
= 24mΩ(typ.) @ V
GS
= -5V
Super High Density Cell Design
Reliable and Rugged
TO-252 Package
Pin Description
G
D
S
Applications
Top View of TO-252
•
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
Ordering and Marking Information
APM 3020P
H a n d lin g C o d e
T e m p. R a ng e
P a c ka g e C o d e
P ackage C ode
U : T O -2 5 2
O p e ra tin g J u n c tio n T e m p . R a n g e
C : -5 5 to 1 2 5 ° C
H a n d lin g C o d e
TU : Tube
TR : Tape & Reel
APM 3020P U :
APM 3020P
XXXXX
X X X X X - D a te C o d e
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D*
I
DM
P
D
Drain-Source Voltage
Gate-Source Voltage
Parameter
(T
A
= 25°C unless otherwise noted)
Rating
-30
±20
-40
-70
50
20
Unit
V
A
W
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
Maximum Power Dissipation
T
A
=25 ºC
T
A
=100 ºC
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ANPEC Electronics Corp.
Rev. A.1 - July., 2002
1
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
