APM3020P
Absolute Maximum Ratings
Symbol
T
J
T
STG
R
θJC
Parameter
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance – Junction to Case
(T
A
= 25°C unless otherwise noted)
Rating
150
-55 to 150
2.5
Unit
ºC
ºC
ºC/W
Electrical Characteristics
Symbol
Static
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
a
V
SD
a
b
(T
A
= 25°C unless otherwise noted)
APM3020P
Min.
-30
-1
-1
17
24
-1.3
23
10
9
V
DD
=-15V , I
DS
=-6A ,
V
GEN
=-10 V , R
G
=1Ω
R
L
=2.5Ω
V
GS
=0V
V
DS
=-25V
Frequency=1.0MHz
16
22
75
31
3720
580
245
pF
30
30
120
80
ns
-3
±100
20
30
-1.3
30
nC
Typ.
Max.
Parameter
Test Condition
Unit
Drain-Source Breakdown Voltage V
GS
=0V , I
DS
=-250A
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
Resistance
Diode Forward Voltage
V
DS
=-24V , V
GS
=0V
V
DS
=V
GS
, I
DS
=-250µA
V
GS
=±20V , V
DS
=0V
V
GS
=-10V , I
DS
=-11A
V
GS
=-5V , I
DS
=-7A
I
SD
=-11A, V
GS
=0V
V
DS
=-15V , V
GS
=-4.5V,
I
DS
=-4.6A
V
µA
V
nA
mΩ
V
Dynamic
Q
g
Total Gate Charge
Q
gs
Q
gd
t
d(ON)
T
r
t
d(OFF)
T
f
C
iss
C
oss
C
rss
Notes
a
b
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
: Guaranteed by design, not subject to production testing
: Pulse test ; pulse width
≤
500µs, duty cycle
≤
2%
Copyright
ANPEC Electronics Corp.
Rev. A.1 - July., 2002
2
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
