APM3020P
Typical Characteristics Cont.
On-Resistance vs. Gate-to-Source Voltage
0.15
-I
DS
=7A
On-Resistaence vs. Junction Temperature
0.030
-V
GS
=10V
-I
DS
=11A
R
DS (ON)
-On-Resistance (Ω)
0.12
R
DS(ON)
-On-Resistance (Ω)
(Normalized)
0.025
0.020
0.015
0.010
0.005
0.000
-50
0.09
0.06
0.03
0.00
0
2
4
6
8
10
-25
0
25
50
75
100 125 150
-V
GS
- Gate-to-Source Voltage (V)
T
j
-Junction Temperature (°C)
Gate Charge
10
3000
-V
DS
=15V
-I
DS
=4.6A
Capacitance Characteristics
-V
GS
-Gate-to-Source Voltage (V)
C-Capacitance (pF)
8
2500
Ciss
2000
1500
1000
500
0
Coss
Crss
6
4
2
0
0
10
20
30
40
0
5
10
15
20
25
30
Q
G
-Total Gate Charge (nC)
-V
DS
-Drain-to-Source Voltage (V)
Copyright
ANPEC Electronics Corp.
Rev. A.1 - July., 2002
4
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
