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CAT25020VI 参数 Datasheet PDF下载

CAT25020VI图片预览
型号: CAT25020VI
PDF下载: 下载PDF文件 查看货源
内容描述: 1K / 2K / 4K SPI串行EEPROM CMOS [1K/2K/4K SPI Serial CMOS EEPROM]
分类和应用: 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
文件页数/大小: 11 页 / 75 K
品牌: CATALYST [ CATALYST SEMICONDUCTOR ]
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CAT25010/20/40
to provide clock pulses. The internal address pointer is
automatically incremented to the next higher address
after each byte of data is shifted out. When the highest
address is reached, the address counter rolls over to
0000h allowing the read cycle to be continued indefinitely.
The read operation is terminated by pulling the
CS
high.
To read the status register, RDSR instruction should be
sent. The contents of the status register are shifted out
on the SO line. The status register may be read at any
time even during a write cycle. Read sequece is
illustrated in Figure 4. Reading status register is illustrated
in Figure 5.
WRITE Sequence
The CAT25010/20/40 powers up in a Write Disable
state. Prior to any write instructions, the WREN instruction
must be sent to CAT25010/20/40. The device goes into
Write enable state by pulling the
CS
low and then
clocking the WREN instruction into CAT25010/20/40.
The
CS
must be brought high after the WREN instruction
to enable writes to the device. If the write operation is
initiated immediately after the WREN instruction without
CS
being brought high, the data will not be written to the
Figure 4. Read Instruction Timing
CS
0
SK
OPCODE
1
2
3
4
5
6
7
8
9
10
20
21
22
23
24
25
26
27
28
29
30
SI
0
0
0
0
0
0
1
1
BYTE ADDRESS*
DATA OUT
SO
HIGH IMPEDANCE
7
MSB
6
5
4
3
2
1
0
*Please check the instruction set table for address
Figure 5. RDSR Instruction Timing
CS
0
SCK
OPCODE
1
2
3
4
5
6
7
8
9
10
11
12
13
14
SI
0
0
0
0
0
1
0
1
DATA OUT
SO
HIGH IMPEDANCE
7
MSB
6
5
4
3
2
1
0
Note: Dashed Line= mode (1, 1) – – – – –
7
Doc. No. 1006, Rev. L