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CAT25020VI 参数 Datasheet PDF下载

CAT25020VI图片预览
型号: CAT25020VI
PDF下载: 下载PDF文件 查看货源
内容描述: 1K / 2K / 4K SPI串行EEPROM CMOS [1K/2K/4K SPI Serial CMOS EEPROM]
分类和应用: 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
文件页数/大小: 11 页 / 75 K
品牌: CATALYST [ CATALYST SEMICONDUCTOR ]
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CAT25010/20/40
DESIGN CONSIDERATIONS
The CAT250140/20/40 powers up in a write disable
state and in a low power standby mode. A WREN
instruction must be issued to perform any writes to the
device after power up. Also,on power up
CS
should be
brought low to enter a ready state and receive an
instruction. After a successful byte/page write or status
register write, the CAT250140/20/40 goes into a write
disable mode.
CS
must be set high after the proper
number of clock cycles to start an internal write cycle.
Access to the array during an internal write cycle is
ignored and programming is continued. On power up,
SO is in a high impedance. If an invalid op code is
received, no data will be shifted into the CAT250140/
20/40, and the serial output pin (SO) will remain in a
high impedance state until the falling edge of
CS
is
detected again.
When powering down, the supply should be taken down
to 0V, so that the CAT250140/20/40 will be reset when
power is ramped back up. If this is not possible, then,
following a brown-out episode, the CAT250140/20/40
can be reset by refreshing the contents of the Status
Register (See Application Note AN10).
Figure 8. Page Write Instruction Timing
CS
0
SK
1
2
3
4
5
6
7
8
13
14
15 16-23
24-31
16+(N-1)x8-1..16+(N-1)x8 16+Nx8-1
OPCODE
BYTE ADDRESS
0
1
0
A7
A0
Data
Byte 1
DATA IN
Data
Byte 2
Data
Byte 3
Data Byte N
0
7..1
SI
0
0
0
0
0
X*
SO
HIGH IMPEDANCE
Note: Dashed Line= mode (1, 1) – – – – –
*X=0 for 25010, 25020 ; X=A8 for 25040
Figure 9.
HOLD
Timing
CS
tCD
SCK
tHD
HOLD
tHZ
SO
HIGH IMPEDANCE
tCD
tHD
tLZ
Note: Dashed Line= mode (1, 1) – – – – –
9
Doc. No. 1006, Rev. L