CAT28F010
D.C. OPERATING CHARACTERISTICS
V
CC
= +5V
±10%,
unless otherwise specified.
Limits
Symbol
I
LI
I
LO
I
SB1
I
SB2
I
CC1
I
CC2(1)
I
CC3(1)
I
CC4(1)
I
PPS
I
PP1
I
PP2(1)
I
PP3(1)
I
PP4(1)
V
IL
V
ILC
V
OL
V
IH
V
IHC
V
OH1
V
OH2
V
ID
I
ID(1)
V
LO
Parameter
Input Leakage Current
Output Leakage Current
V
CC
Standby Current CMOS
V
CC
Standby Current TTL
V
CC
Active Read Current
V
CC
Programming Current
V
CC
Erase Current
V
CC
Prog./Erase Verify Current
V
PP
Standby Current
V
PP
Read Current
V
PP
Programming Current
V
PP
Erase Current
V
PP
Prog./Erase Verify Current
Input Low Level TTL
Input Low Level CMOS
Output Low Level
Input High Level TTL
Input High Level CMOS
Output High Level TTL
Output High Level CMOS
A
9
Signature Voltage
A
9
Signature Current
V
CC
Erase/Prog. Lockout Voltage
2.5
2
V
CC
*0.7
2.4
V
CC
–0.4
11.4
13
200
–0.5
–0.5
Min.
Max.
±1
±1
100
1
30
15
15
15
±10
200
30
30
5
0.8
0.8
0.45
V
CC
+0.5
V
CC
+0.5
Unit
µA
µA
µA
mA
mA
mA
mA
mA
µA
µA
mA
mA
mA
V
V
V
V
V
V
V
V
µA
V
I
OH
= –2.5mA, V
CC
= 4.5V
I
OH
= –400µA, V
CC
= 4.5V
A
9
= V
ID
A
9
= V
ID
I
OL
= 5.8mA, V
CC
= 4.5V
Test Conditions
V
IN
= V
CC
or V
SS
V
CC
= 5.5V, OE = V
IH
V
OUT
= V
CC
or V
SS
,
V
CC
= 5.5V, OE = V
IH
CE = V
CC
±0.5V,
V
CC
= 5.5V
CE = V
IH
, V
CC
= 5.5V
V
CC
= 5.5V, CE = V
IL
,
I
OUT
= 0mA, f = 6 MHz
V
CC
= 5.5V,
Programming in Progress
V
CC
= 5.5V,
Erasure in Progress
V
CC
= 5.5V, Program or
Erase Verify in Progress
V
PP
= V
PPL
V
PP
= V
PPH
V
PP
= V
PPH
,
Programming in Progress
V
PP
= V
PPH
,
Erasure in Progress
V
PP
= V
PPH
, Program or
Erase Verify in Progress
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
Doc. No. 25005-0A 2/98 F-1
4
CATALYST [ CATALYST SEMICONDUCTOR ]
