CYStech Electronics Corp.
Absolute Maximum Ratings
(Tc=25°C, unless otherwise noted)
Parameter
Symbol
Spec. No. : C438Q8
Issued Date : 2009.02.11
Revised Date :
Page No. : 2/9
Limits
N-channel P-channel
Unit
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @T
C
=25
°C
(Note 1)
Continuous Drain Current @T
C
=100
°C
(Note 1)
Pulsed Drain Current
(Note 2)
Total Power Dissipation @T
A
=25°C
Linear Derating Factor
(Note 1)
BV
DSS
V
GS
I
D
I
D
I
DM
Pd
Tj, Tstg
Rth,ja
Rth,jc
40
±20
7
6
28
-40
±20
-6
-5
-24
Operating Junction and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
(Note 1)
Thermal Resistance, Junction-to-Case
2.4
0.016
-55~+175
62.5
25
V
V
A
A
A
W
W /
°C
°C
°C/W
°C/W
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, 135
°C/W
when mounted on minimum copper pad
2.
Pulse width limited by maximum junction temperature
N-Channel Electrical Characteristics
(Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BV
DSS
V
GS(th)
I
GSS
I
DSS
*R
DS(ON)
*G
FS
Dynamic
Ciss
-
Coss
-
Crss
-
*t
d(ON)
-
*t
r
-
*t
d(OFF)
-
*t
f
-
*Qg
-
*Qgs
-
*Qgd
-
Source-Drain Diode
*V
SD
-
*I
S
-
*I
SM
-
40
1.0
-
-
-
-
-
-
-
1.5
-
-
-
25
30
19
916
79
56
2.3
7.2
11
6
9.1
2.3
3
-
-
-
-
3.0
±100
1
25
28
36
-
-
-
-
-
-
-
-
-
-
-
1.3
7
20
V
V
nA
μA
μA
mΩ
S
V
GS
=0, I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
GS
=±20V, V
DS
=0
V
DS
=32V, V
GS
=0
V
DS
=30V, V
GS
=0, Tj=125°C
I
D
=7A, V
GS
=10V
I
D
=6A, V
GS
=7V
V
DS
=5V, I
D
=7A
pF
V
DS
=20V, V
GS
=0, f=1MHz
ns
V
DS
=10V, I
D
=1A, V
GS
=10V, R
G
=6
Ω
nC
V
DS
=20V, I
D
=7A, V
GS
=10V
V
A
A
V
GS
=0V, I
S
=7A
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
MTC2804Q8
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
