CYStech Electronics Corp.
P-channel Characteristic Curves(Cont.)
Gate C
harge C
haracteristics
10
I
D
= - 6A
- V
GS
- Gate-to-S
ource Voltage(V)
8
V
DS
= - 15V
- 20V
6
Capacitance(pF
)
900
1200
Ciss
1500
Spec. No. : C438Q8
Issued Date : 2009.02.11
Revised Date :
Page No. : 7/9
Capacitance Characteristics
f = 1 MHz
V
GS
= 0 V
4
600
Coss
300
Crss
2
0
0
3
6
Q
g
- Gate C
harge(nC
)
9
12
0
0
20
10
- V , Drain-S
ource Voltage(V)
DS
30
40
100
Maximum S Operating Area
afe
R
DS(ON)
Limit
S
ingle Pulse Maximum Power Dissipation
50
S
ingle Pulse
R
JA
= 125°C/ W
θ
T
A
= 25°C
10
-I
D
- Drain Current( A )
100
μ
s
1ms
10ms
100ms
P( pk ),Peak Transient Power( W )
40
30
1
1s
10s
DC
20
0.1
V
GS
= 10V
S
ingle Pulse
R
θ
JA
= 125°C/ W
T
A
= 25°C
10
0.01
0.1
1
10
-V
DS
- Drain-S
ource Voltage( V )
100
0
0.001
0.01
0.1
1
t
1
,Time ( sec )
10
100
1000
Transient Thermal Response Curve
1
Duty Cycle = 0.5
r( t ),Normalized Effective
Transient Thermal Resistance
0.2
0.1
0.1
0.05
Notes
:
0.02
P
DM
0.01
t1
t2
0.01
S
ingle Pulse
1.Duty Cycle,D =
2.R
θ
JA
=125°C/ W
t1
t2
3.T
J
- T
A
= P * R
JA
(t)
θ
4.R
JA
(t)=r(t) + R
JA
θ
θ
0.001
10
-4
10
-3
10
-2
10
t
1
,Time (sec)
-1
1
10
100
1000
MTC2804Q8
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
