CYStech Electronics Corp.
P-channel Characteristic Curves
Spec. No. : C438Q8
Issued Date : 2009.02.11
Revised Date :
Page No. : 6/9
On-R
esistance Variation with Drain C
urrent and Gate Voltage
25
On-R
egion C
haracteristics
V
GS
= - 10.0V
- 8.0V
2.5
20
- 7.0V
-I
D
- Drain Current(A)
15
- 6.0V
R
DS(ON)
-Normalized
Drain-S
ource On-Resistance
2
1.5
V = - 6.0 V
GS
- 7.0 V
- 8.0 V
10
1
- 10.0 V
5
0
0.5
0
1
2
3
-V - Drain-to-S
ource Voltage(V)
DS
4
5
0
5
10
15
- I
D
- Drain C
urrent(A)
20
25
1.9
On-R
esistance Variation with Temperature
I
D
= -6 A
V
GS
= - 10V
0.2
On-R
esistance Variation with Gate-to-S
ource Voltage
I
D
= - 3A
R
DS(ON)
- On-Resistance(
Ω
)
0.15
1.6
R
DS(on)
- Normalized
Drain-S
ource On-Resistance
1.3
0.1
T
A
= 125°C
0.05
T
A
= 25°C
0
1.0
0.7
0.4
-50
-25
75
25
50
0
T
J
- J
unction Temperature (°C
)
100
125
150
2
6
4
- V
GS
- Gate-to-S
ource Voltage(V)
8
10
12
10
-I
D
- Drain Current( A )
8
6
4
2
0
2
Transfer C
haracteristics
V = - 10V
DS
T = -55°C
A
100
Body Diode Forward Voltage Variation
with S
ource C
urrent and Temperature
10
-Is - Reverse Drain Current(A)
V
GS
= 0V
25°C
1
T
A
= 125°C
0.1
25°C
-55°C
125°C
0.01
0.001
3
4
-V
S
- G
ate-S
ource Voltage( V )
G
5
6
0
0.4
0.2
0.6
0.8
1.0
-V
SD
- Body Diode Forward Voltage(V)
1.2
1.4
MTC2804Q8
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
