CYStech Electronics Corp.
Symbol
Static
BV
DSS
V
GS(th)
I
GSS
I
DSS
*R
DS(ON)
Min.
-40
-1.0
-
-
-
-
-
-
Typ.
-
-1.5
-
-
-
38
46
11
1039
327
301
6.5
9.5
18
10
9
1.5
2.9
-
-
-
Max.
-
-3.0
±100
-1
-25
44
55
-
-
-
-
-
-
-
-
-
-
-
-1.3
-6
-20
Unit
V
V
nA
μA
μA
mΩ
S
Spec. No. : C438Q8
Issued Date : 2009.02.11
Revised Date :
Page No. : 3/9
P-Channel Electrical Characteristics
(Tc=25°C, unless otherwise specified)
Test Conditions
V
GS
=0, I
D
=-250μA
V
DS
=V
GS
, I
D
=-250μA
V
GS
=±20V, V
DS
=0
V
DS
=-32V, V
GS
=0
V
DS
=-30V, V
GS
=0, Tj=125°C
I
D
=-6A, V
GS
=-10V
I
D
=-5A, V
GS
=-7V
V
DS
=-5V, I
D
=-6A
*G
FS
Dynamic
Ciss
-
Coss
-
Crss
-
*t
d(ON)
-
*t
r
-
*t
d(OFF)
-
*t
f
-
*Qg
-
*Qgs
-
*Qgd
-
Source-Drain Diode
*V
SD
-
*I
S
-
*I
SM
-
pF
V
DS
=-20V, V
GS
=0, f=1MHz
ns
V
DS
=-10V, I
D
=-1A, V
GS
=-10V, R
G
=6
Ω
nC
V
DS
=-20V, I
D
=-6A, V
GS
=-10V
V
A
V
GS
=0V, I
S
=-6A
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
MTC2804Q8
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
