CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
30
25
-I
D
,
Drain Current (A)
20
15
10
-V
GS
=3V
Spec. No. : C400G6
Issued Date : 2012.12.20
Revised Date :
Page No. : 3/9
Brekdown Voltage vs Ambient Temperature
1.4
-BV
DSS
, Normalized Drain-Source
Breakdown Voltage
10V
9V
8V
7V
6V
-V
GS
=5V
1.2
1
0.8
0.6
0.4
I
D
=-250
μ
A,
V
GS
=0V
-V
GS
=4V
5
0
0
1
2
3
4
-V
DS
,
Drain-Source Voltage(V)
5
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
-V
SD
, Source-Drain Voltage(V)
1
0.8
Tj=150°C
V
GS
=0V
Tj=25°C
1000
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
V
GS
=-3V
V
GS
=-4V
100
0.6
0.4
0.2
V
GS
=-4.5V
V
GS
=-10V
10
0.01
0.1
1
10
-I
D
, Drain Current(A)
100
0
2
4
6
8
-I
DR
, Reverse Drain Current (A)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
200
R
DS(ON)
, Normalized Static Drain-
Source On-State Resistance
2
I
D
=-5A
R
DS(ON)
, Static Drain-Source On-
State Resistance(mΩ)
180
160
140
120
100
80
60
40
20
0
0
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-60
-20
V
GS
=-10V, I
D
=-5A
R
DSON
@Tj=25°C: 39mΩ
4
6
8
-V
GS
, Gate-Source Voltage(V)
10
20
60
100
140
Tj, Junction Temperature(°C)
180
MTP658G6
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
