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MTP658G6 参数 Datasheet PDF下载

MTP658G6图片预览
型号: MTP658G6
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型MOSFET [P-Channel Enhancement Mode MOSFET]
分类和应用:
文件页数/大小: 9 页 / 353 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
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CYStech Electronics Corp.
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5
°C
Spec. No. : C400G6
Issued Date : 2012.12.20
Revised Date :
Page No. : 8/9
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Note : All temperatures refer to topside of the package, measured on the package body surface.
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature
Min(T
S
min)
−Temperature
Max(T
S
max)
−Time(ts
min
to ts
max
)
Time maintained above:
−Temperature
(T
L
)
Time (t
L
)
Peak Temperature(T
P
)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25
°C
to peak temperature
Sn-Pb eutectic Assembly
3°C/second max.
100°C
150°C
60-120 seconds
183°C
60-150 seconds
240 +0/-5
°C
10-30 seconds
6°C/second max.
6 minutes max.
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5
°C
20-40 seconds
6°C/second max.
8 minutes max.
MTP658G6
CYStek Product Specification