EDE1104ACBG, EDE1108ACBG, EDE1116ACBG
ODT DC Electrical Characteristics (TC = 0°C to +85°C, VDD, VDDQ = 1.8V
±
0.1V)
Parameter
Rtt effective impedance value for EMRS (A6, A2)
=
0, 1; 75
Ω
Rtt effective impedance value for EMRS (A6, A2)
=
1, 0; 150
Ω
Rtt effective impedance value for EMRS (A6, A2)
=
1, 1; 50
Ω
Deviation of VM with respect to VDDQ/2
Symbol
Rtt1 (eff)
Rtt2 (eff)
Rtt3 (eff)
∆VM
min.
60
120
40
−6
typ.
75
150
50
max.
90
180
60
+6
Unit
Ω
Ω
Ω
%
Note
1
1
1
1
Note: 1. Test condition for Rtt measurements.
Measurement Definition for Rtt (eff)
Apply VIH (AC) and VIL (AC) to test pin separately, then measure current I(VIH(AC)) and I(VIL(AC)) respectively.
VIH(AC), and VDDQ values defined in SSTL_18.
Rtt
(
eff
)
=
VIH
(
AC
)
−
VIL
(
AC
)
I
(
VIH
(
AC
))
−
I
(
VIL
(
AC
))
Measurement Definition for
∆VM
Measure voltage (VM) at test pin (midpoint) with no load.
2
×
VM
- 1
×
100
∆
VM
=
VDDQ
OCD Default Characteristics (TC = 0°C to +85°C, VDD, VDDQ = 1.8V
±
0.1V)
Parameter
Output impedance
Pull-up and pull-down mismatch
Output slew rate
min.
12.6
0
1.5
typ.
18
max.
23.4
4
5
Unit
Ω
Ω
V/ns
Notes
1, 5
1, 2
3, 4
Notes: 1. Impedance measurement condition for output source DC current: VDDQ = 1.7V; VOUT = 1420mV;
(VOUT−VDDQ)/IOH must be less than 23.4Ω for values of VOUT between VDDQ and VDDQ−280mV.
Impedance measurement condition for output sink DC current: VDDQ = 1.7V; VOUT = 280mV;
VOUT/IOL must be less than 23.4Ω for values of VOUT between 0V and 280mV.
2. Mismatch is absolute value between pull up and pull down, both are measured at same temperature and
voltage.
3. Slew rate measured from VIL(AC) to VIH(AC).
4. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate
as measured from AC to AC. This is guaranteed by design and characterization.
5. DRAM I/O specifications for timing, voltage, and slew rate are no longer applicable if OCD is changed
from default settings.
Data Sheet E1173E40 (Ver. 4.0)
12
ELPIDA [ ELPIDA MEMORY ]
