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HM5117805TS-7 参数 Datasheet PDF下载

HM5117805TS-7图片预览
型号: HM5117805TS-7
PDF下载: 下载PDF文件 查看货源
内容描述: 16M的EDO DRAM (2- Mword ×8位)的2千刷新 [16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh]
分类和应用: 存储内存集成电路光电二极管动态存储器
文件页数/大小: 32 页 / 539 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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HM5117805 Series
Self Refresh Mode (L-version)
HM5117805L
-5
Symbol
t
RASS
t
RPS
t
CHS
Min
100
90
–50
Max
-6
Min
100
110
–50
Max
-7
Min
100
130
–50
Max
Unit
µs
ns
ns
Notes
EO
Parameter
12
RAS
pulse width (self refresh)
RAS
precharge time (self refresh)
CAS
hold time (self refresh)
Notes: 1. AC measurements assume t
T
= 2 ns.
2. An initial pause of 200 µs is required after power up followed by a minimum of eight initialization
cycles (any combination of cycles containing
RAS-only
refresh or
CAS-before-RAS
refresh). If the
internal refresh counter is used, a minimum of eight
CAS-before-RAS
refresh cycles are required.
3. Operation with the t
RCD
(max) limit insures that t
RAC
(max) can be met, t
RCD
(max) is specified as a
reference point only; if t
RCD
is greater than the specified t
RCD
(max) limit, then access time is
controlled exclusively by t
CAC
.
4. Operation with the t
RAD
(max) limit insures that t
RAC
(max) can be met, t
RAD
(max) is specified as a
reference point only; if t
RAD
is greater than the specified t
RAD
(max) limit, then access time is
controlled exclusively by t
AA
.
5. Either t
OED
or t
CDD
must be satisfied.
6. Either t
DZO
or t
DZC
must be satisfied.
7. V
IH
(min) and V
IL
(max) are reference levels for measuring timing of input signals. Also, transition
times are measured between V
IH
(min) and V
IL
(max).
8. Assumes that t
RCD
t
RCD
(max) and t
RAD
t
RAD
(max). If t
RCD
or t
RAD
is greater than the maximum
recommended value shown in this table, t
RAC
exceeds the value shown.
9. Measured with a load circuit equivalent to 1 TTL loads and 100 pF.
10. Assumes that t
RCD
t
RCD
(max) and t
RAD
t
RAD
(max).
11. Assumes that t
RCD
t
RCD
(max) and t
RAD
t
RAD
(max).
12. Either t
RCH
or t
RRH
must be satisfied for a read cycles.
13. t
OFF
(max) and t
OEZ
(max) define the time at which the outputs achieve the open circuit condition and
are not referred to output voltage levels.
14. t
WCS
, t
RWD
, t
CWD
, t
AWD
and t
CPW
are not restrictive operating parameters. They are included in the data
sheet as electrical characteristics only; if t
WCS
t
WCS
(min), the cycle is an early write cycle and the
data out pin will remain open circuit (high impedance) throughout the entire cycle; if t
RWD
t
RWD
(min),
t
CWD
t
CWD
(min), and t
AWD
t
AWD
(min), or t
CWD
t
CWD
(min), t
AWD
t
AWD
(min) and t
CPW
t
CPW
(min), the
cycle is a read-modify-write and the data output will contain data read from the selected cell; if
neither of the above sets of conditions is satisfied, the condition of the data out (at access time) is
indeterminate.
15. These parameters are referred to
CAS
leading edge in early write cycles and to
WE
leading edge
in delayed write or read-modify-write cycles.
16. t
RASP
defines
RAS
pulse width in EDO page mode cycles.
17. Access time is determined by the longest among t
AA
, t
CAC
and t
CPA
.
18. In delayed write or read-modify-write cycles,
OE
must disable output buffer prior to applying data
to the device.
19. t
HPC
(min) can be achieved during a series of EDO page mode write cycles or EDO page mode read
cycles. If both write and read operation are mixed in a EDO page mode
RAS
cycle (EDO page
mode mix cycle (1), (2)), minimum value of
CAS
cycle (t
CAS
+ t
CP
+ 2 t
T
) becomes greater than the
specified t
HPC
(min) value.The value of
CAS
cycle time of mixed EDO page mode is shown in EDO
page mode mix cycle (1) and (2).
LP
Data Sheet E0156H10
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