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HM5117805TS-7 参数 Datasheet PDF下载

HM5117805TS-7图片预览
型号: HM5117805TS-7
PDF下载: 下载PDF文件 查看货源
内容描述: 16M的EDO DRAM (2- Mword ×8位)的2千刷新 [16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh]
分类和应用: 存储内存集成电路光电二极管动态存储器
文件页数/大小: 32 页 / 539 K
品牌: ELPIDA [ ELPIDA MEMORY ]
 浏览型号HM5117805TS-7的Datasheet PDF文件第5页浏览型号HM5117805TS-7的Datasheet PDF文件第6页浏览型号HM5117805TS-7的Datasheet PDF文件第7页浏览型号HM5117805TS-7的Datasheet PDF文件第8页浏览型号HM5117805TS-7的Datasheet PDF文件第10页浏览型号HM5117805TS-7的Datasheet PDF文件第11页浏览型号HM5117805TS-7的Datasheet PDF文件第12页浏览型号HM5117805TS-7的Datasheet PDF文件第13页  
HM5117805 Series
EO
Read Cycle
Parameter
HM5117805
-5
Symbol
t
RAC
t
CAC
t
AA
t
OEA
t
RCS
Min
0
0
50
0
25
15
0
3
3
Max
50
13
25
13
-6
Min
0
0
60
0
30
18
0
3
3
15
3
15
15
60
Max
60
15
30
15
15
15
15
15
-7
Min
0
0
70
0
35
23
0
3
3
18
3
18
18
70
Max
70
18
35
18
15
15
15
15
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
13, 20
13
5
20
20
20
12
12
Notes
8, 9
9, 10, 17
9, 11, 17
9
Access time from
RAS
Access time from
CAS
Access time from address
Access time from
OE
Read command setup time
Read command hold time to
CAS
Read command hold time to
RAS
Read command hold time from
RAS
t
RCHR
t
RRH
Column address to
RAS
lead time
Column address to
CAS
lead time
CAS
to output in low-Z
Output data hold time
Output data hold time from
OE
Output buffer turn-off time
Output buffer turn-off to
OE
CAS
to Din delay time
Output data hold time from
RAS
Output buffer turn-off to
RAS
Output buffer turn-off to
WE
WE
to Din delay time
RAS
to Din delay time
RAS
next
CAS
delay time
LP
t
RCH
t
RAL
t
CAL
t
CLZ
t
OH
t
OHO
t
OFF
t
OEZ
t
CDD
t
OHR
t
OFR
t
WEZ
t
WED
t
RDD
t
RNCD
Data Sheet E0156H10
9
ro
13
13
13
3
13
13
13
13
50
du
ct