欢迎访问ic37.com |
会员登录 免费注册
发布采购

HM5117805TS-7 参数 Datasheet PDF下载

HM5117805TS-7图片预览
型号: HM5117805TS-7
PDF下载: 下载PDF文件 查看货源
内容描述: 16M的EDO DRAM (2- Mword ×8位)的2千刷新 [16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh]
分类和应用: 存储内存集成电路光电二极管动态存储器
文件页数/大小: 32 页 / 539 K
品牌: ELPIDA [ ELPIDA MEMORY ]
 浏览型号HM5117805TS-7的Datasheet PDF文件第4页浏览型号HM5117805TS-7的Datasheet PDF文件第5页浏览型号HM5117805TS-7的Datasheet PDF文件第6页浏览型号HM5117805TS-7的Datasheet PDF文件第7页浏览型号HM5117805TS-7的Datasheet PDF文件第9页浏览型号HM5117805TS-7的Datasheet PDF文件第10页浏览型号HM5117805TS-7的Datasheet PDF文件第11页浏览型号HM5117805TS-7的Datasheet PDF文件第12页  
HM5117805 Series
Read, Write, Read-Modify-Write and Refresh Cycles (Common parameters)
HM5117805
-5
Symbol
t
RC
t
RP
t
CP
t
RAS
t
CAS
t
ASR
Min
84
30
7
50
7
0
7
0
7
11
9
10
35
5
Max
-6
Min
104
40
10
Max
-7
Min
124
50
13
Max
Unit
ns
ns
ns
Notes
EO
Parameter
RAS
pulse width
CAS
pulse width
RAS
hold time
CAS
hold time
8
Random read or write cycle time
RAS
precharge time
CAS
precharge time
Row address setup time
Row address hold time
Column address setup time
Column address hold time
RAS
to
CAS
delay time
RAS
to column address delay time t
RAD
t
RSH
t
CSH
CAS
to
RAS
precharge time
OE
to Din delay time
OE
delay time from Din
CAS
delay time from Din
Transition time (rise and fall)
LP
t
RAH
t
ASC
t
CAH
t
RCD
t
CRP
t
OED
t
DZO
t
DZC
t
T
10000 60
10000 10
37
25
0
10
0
10
14
12
13
40
5
15
0
0
2
10000 70
10000 13
45
30
50
0
10
0
13
14
12
13
45
5
18
0
0
2
10000 ns
10000 ns
52
35
50
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
5
6
6
7
3
4
Data Sheet E0156H10
ro
13
0
0
2
50
du
ct