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HM534253BJ-8 参数 Datasheet PDF下载

HM534253BJ-8图片预览
型号: HM534253BJ-8
PDF下载: 下载PDF文件 查看货源
内容描述: 1M的VRAM ( 256千字×4位) [1 M VRAM (256-kword x 4-bit)]
分类和应用: 存储内存集成电路
文件页数/大小: 45 页 / 448 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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HM534253B Series
SAM Column Decoder
DR1
SAM I/O Bus
AX8 = 0
SAM I/O Bus
Memory
Array
DR3
DR0
SAM I/O Buffer
SI/O
Figure 5 Block Diagram for Split Transfer
DR2
EO
Split read transfer cycle is set when
CAS
is high,
DT/OE
is low,
WE
is high and DSF is high at the falling
edge of
RAS.
The cycle can be executed asyncronously with SC. However, t
STS
(min) timing specified
between SC rising and
RAS
falling must be satisfied. SAM last address must be accessed, satisfying t
RST
(min), t
CST
(min), and t
AST
(min) timings specified between
RAS
or
CAS
falling and column address. (See
figure 6.)
In split read transfer, SI/O isn't switched to output state. Therefore, read transfer must be executed to switch
SI/O to output state when the previous transfer cycle is pseudo transfer or write transfer cycle.
LP
Memory
Array
AX8 = 1
Data Sheet E0165H10
13
ro
du
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