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HM534253BJ-8 参数 Datasheet PDF下载

HM534253BJ-8图片预览
型号: HM534253BJ-8
PDF下载: 下载PDF文件 查看货源
内容描述: 1M的VRAM ( 256千字×4位) [1 M VRAM (256-kword x 4-bit)]
分类和应用: 存储内存集成电路
文件页数/大小: 45 页 / 448 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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HM534253B Series  
DC Characteristics (Ta = 0 to +70°C, VCC = 5 V ± 10%, VSS = 0 V) (cont)  
HM534253B  
-6 -7  
Parameter Symbol Min Max Min Max Min Max Min Max Unit Test Conditions  
-8  
-10  
Data  
transfer  
current  
ICC6  
ICC12  
ILI  
80  
75  
65  
60  
mA RAS, CAS cycling SC = VIL,  
t
RC = min  
SE = VIH  
130  
125  
105  
100 mA  
SE = VIL,  
SC cycling  
tSCC = min  
Input  
leakage  
current  
–10 10  
–10 10  
–10 10  
–10 10  
–10 10  
–10 10  
–10 10  
–10 10  
µA  
µA  
Output  
leakage  
current  
ILO  
Output high VOH  
voltage  
2.4  
2.4  
2.4  
2.4  
V
V
IOH = –2 mA  
IOL = 4.2 mA  
Output low VOL  
voltage  
0.4  
0.4  
0.4  
0.4  
Notes: 1. ICC depends on output load condition when the device is selected. ICC max is specified at the output  
open condition.  
2. Address can be changed once while RAS is low and CAS is high.  
Capacitance (Ta = 25°C, VCC = 5 V, f = 1 MHz, Bias: Clock, I/O = VCC, address =VSS)  
Parameter  
Symbol  
CI1  
Typ  
Max  
Unit  
pF  
Note  
Input capacitance (Address)  
Input capacitance (Clocks)  
Output capacitance (I/O, SI/O, QSF)  
5
5
7
1
1
1
CI2  
pF  
CI/O  
pF  
Note: 1. This parameter is sampled and not 100% tested.  
AC Characteristics (Ta = 0 to +70°C, VCC = 5 V ± 10%, VSS = 0 V)*1, *16  
Test Conditions  
Input rise and fall time: 5 ns  
Input pulse levels: VSS to 3.0 V  
Input timing reference levels: 0.8 V, 2.4 V  
Output timing reference levels: 0.8 V, 2.0 V  
Output load: See figures  
Data Sheet E0165H10  
17