merging Memory & Logic Solutions Inc.
RECOMMENDED DC OPERATING CONDITIONS
1)
Parameter
Supply voltage
Ground
Input high voltage
Input low voltage
1.
2.
3.
4.
EM610FV8T Series
Low Power, 128Kx8 SRAM
Symbol
V
CC
V
SS
V
IH
V
IL
Min
2.7
0
2.2
-0.2
3)
Typ
3.3
0
-
-
Max
3.6
0
V
CC
+ 0.2
2)
0.6
Unit
V
V
V
V
TA= -40 to 85
o
C, otherwise specified
Overshoot: V
CC
+2.0 V in case of pulse width < 20ns
Undershoot: -2.0 V in case of pulse width < 20ns
Overshoot and undershoot are sampled, not 100% tested
.
CAPACITANCE
1)
(f =1MHz, T
A
=25
o
C)
Item
Input capacitance
Input/Ouput capacitance
1. Capacitance is sampled, not 100% tested
Symbol
C
IN
C
IO
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
8
10
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Parameter
Input leakage current
Output leakage current
Operating power supply
Symbol
I
LI
I
LO
I
CC
I
CC1
Average operating current
I
CC2
Output low voltage
Output high voltage
Standby Current (TTL)
V
OL
V
OH
I
SB
V
IN
=V
SS
to V
CC
CS
1
= V
IH
, CS
2
=V
IL
or OE=V
IH
or WE=V
IL
, V
IO
= V
SS
to V
CC
I
IO
=0mA, CS
1
=V
IL
, CS
2
=WE = V
IH
, V
I N
=V
I H
or V
IL
Cycle time=1µs, 100% duty, I
IO
=0mA,
CS
1
< 0.2V, CS
2
>V
CC
-0.2V,
V
IN
< 0.2V or V
IN
>V
CC
-0.2V
Cycle time = Min, I
IO
=0mA, 100% duty,
CS
1
=V
IL
, CS
2
=V
IH,
V
IN
=V
IL
or V
I H
I
OL
= 2.1mA
I
O H
= -1.0mA
CS
1
= V
IH
, CS
2
=V
IL
, Other inputs=V
IH
or V
IL
CS
1
>V
CC
-0.2V, CS
2
>V
C C
-0.2V (CS
1
controlled)
or 0V<CS
2
<0.2V (CS
2
controlled),
Test Conditions
Min
-1
-1
-
-
55ns
70ns
-
-
-
2.4
-
Typ
-
-
-
-
-
-
-
-
-
Max
1
1
3
3
25
20
0.4
-
0.3
Unit
µA
µA
mA
mA
mA
V
V
mA
Standby Current (CMOS)
I
SB1
Other inputs=0~V
CC
(Typ. condition : V
C C
=3.3V @ 25 C)
(Max. condition : V
CC
=3.6V @ 85
o
C)
o
LL
LF
-
0.5
1)
5
µA
NOTES
1. Typical values are measured at Vcc=3.3V, T
A
=
25
o
C and not 100% tested.
4
EMLSI [ Emerging Memory & Logic Solutions Inc ]
