CMP1617BAX-F60E 参数 Datasheet PDF下载

CMP1617BAx-E

READ CYCLE (1)

Address

tOH

tAA

CMOS LPRAM

tRC

(Address controlled,/CS=/OE=V

IL

, /ZZ=/WE=V

IH

, /UB or/and /LB=V

IL

)

Data Out

Previous Data Valid

Data Valid

READ CYCLE (2)

Address

(/ZZ=/WE=V

IH

)

tRC

tAA

tCO

tOH

/CS

tHZ

/UB, /LB

/OE

tOLZ

tBLZ

tLZ

tBA

tBHZ

tOE

tOHZ

Data Out

High-Z

Data Valid

1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced

to output voltage levels.

2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device

to device interconnection.

3. Do not access device with cycle timing shorter than tRC(tWC) for continuous periods > 40us.

PAGE READ CYCLE

(/ZZ=/WE=V

IH

, 16 words access)

tMRC

tRC

tPC

tPC

tPC

tPC

tPC

tPC

tPC

A0~A3

tAA

A4~A20

tOH

/CS

/UB, /LB

/OE

tCO

tHZ

tBA

tBHZ

tOE

tOLZ

tBLZ

tPAA

Data Valid

tPAA

Data Valid

tPAA

Data Valid

tPAA

Data Valid

tPAA

Data Valid

tPAA

Data Valid

tPAA

Data Valid

Data Valid

tOHZ

Data Out

High-Z

tLZ

1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced

to output voltage levels.

2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device

to device interconnection.

3. Do not access device with cycle timing shorter than tRC(tWC) for continuous periods > 40us.

7

Revision 0.5

Jul. 2006