2SK3673-01MR
FUJI POWER MOSFET
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220F
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Isolation Voltage
Symbol
V
DS
V
DSX *5
I
D
I
D(puls]
V
GS
I
AR *2
E
AS *1
dV
DS
/dt
*4
dV/dt
*3
P
D
Ta=25°C
Tc=25°C
T
ch
T
stg
V
iso
Ratings
700
700
±10
±40
±30
10
242.2
40
5
2.16
80
+150
-55 to +150
2
Unit
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
kVrms
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
*6
<
*1 L=4.45mH, Vcc=70V,Tch=25°C, See to Avalanche Energy Graph
*2 Tch=150°C
<
<
*3 I
F
<
D
, -di/dt=50A/µs, Vcc=BV
DSS
, Tch=150°C *4 V
DS
<700V *5 V
GS
=-30V *6 t=60sec, f=60Hz
=-I
=
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
=250µA
V
GS
=0V
I
D
= 250µA
V
DS
=V
GS
V
DS
=700V V
GS
=0V
T
ch
=25°C
T
ch
=125°C
V
DS
=560V V
GS
=0V
V
GS
=±30V V
DS
=0V
I
D
=5A
V
GS
=10V
I
D
=5A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=300V I
D
=5A
V
GS
=10V
R
GS
=10
Ω
V
CC
=350V
I
D
=10A
V
GS
=10V
L=4.45mH T
ch
=25°C
I
F
=10A V
GS
=0V T
ch
=25°C
I
F
=10A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
Min.
700
3.0
Typ.
Max.
5.0
25
250
100
1.18
Units
V
V
µA
nA
Ω
S
pF
5
0.91
9.5
900
1350
140
210
8
12
22
33
6
9
40
60
9
14
25
37.5
4
6
8.5
13
10
0.90
2.75
14.0
ns
nC
1.50
A
V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
1.563
58.0
Units
°C/W
°C/W
1
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