2SK3673-01MR
FUJI POWER MOSFET
7.0
6.5
6.0
5.5
5.0
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
µ
A
12
Typical Gate Charge Characteristics
VGS=f(Qg):ID=10A,Tch=25
°
C
10
max.
8
Vcc= 140V
350V
560V
VGS(th) [V]
4.5
VGS [V]
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
min.
6
4
2
0
0
5
10
15
20
25
30
Tch [
°
C]
Qg [nC]
10
1
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
100
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
µ
s pulse test,Tch=25
°
C
Ciss
10
0
10
C [nF]
10
-1
Coss
IF [A]
1
0.1
0.00
10
-2
Crss
10
-3
10
0
10
1
10
2
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VDS [V]
VSD [V]
10
3
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10
Ω
700
Maximum Avalanche Energy vs. starting Tch
E(AS)=f(starting Tch):Vcc=70V
I
AS
=4A
600
tf
500
10
2
td(off)
I
AS
=6A
E
AS
[mJ]
400
t [ns]
td(on)
10
1
300
I
AS
=10A
200
tr
100
10
0
0
-1
10
10
0
10
1
0
25
50
75
100
125
150
ID [A]
starting Tch [
°
C]
3
FUJI [ FUJI ELECTRIC ]
