2SK3673-01MR
Characteristics
FUJI POWER MOSFET
120
Allowable Power Dissipation
PD=f(Tc)
16
Typical Output Characteristics
ID=f(VDS):80
µ
s pulse test,Tch=25
°
C
20V
10V
8.0V
7.0V
100
12
80
6.5V
PD [W]
60
ID [A]
8
40
4
20
6.0V
VGS=5.5V
0
0
25
50
75
100
125
150
0
0
5
10
15
20
25
Tc [
°
C]
VDS [V]
Typical Transfer Characteristic
ID=f(VGS):80
µ
s pulse test,VDS=25V,Tch=25
°
C
10
100
Typical Transconductance
gfs=f(ID):80
µ
s pulse test,VDS=25V,Tch=25
°
C
ID[A]
1
gfs [S]
10
0.1
1
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
VGS[V]
ID [A]
2.00
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
µ
s pulse test,Tch=25
°
C
VGS=5.5V
6.0V
6.5V
4.0
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=5A,VGS=10V
3.5
1.75
3.0
RDS(on) [
Ω
]
RDS(on) [
Ω
]
2.5
1.50
7.0V
8.0V
10V
20V
2.0
max.
1.5
typ.
1.0
1.25
1.00
0.5
0.75
0
4
8
12
16
0.0
-50
-25
0
25
50
75
100
125
150
ID [A]
Tch [
°
C]
2
FUJI [ FUJI ELECTRIC ]
