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GS74117AX-12 参数 Datasheet PDF下载

GS74117AX-12图片预览
型号: GS74117AX-12
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×16的4Mb SRAM的异步 [256K x 16 4Mb Asynchronous SRAM]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 12 页 / 347 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS74117AX
Capacitance
Parameter
Input Capacitance
Output Capacitance
Symbol
C
IN
C
OUT
Test Condition
V
IN
= 0 V
V
OUT
= 0 V
Max
5
7
Unit
pF
pF
Notes:
1. Tested at T
A
= 25°C, f = 1 MHz
2. These parameters are sampled and are not 100% tested.
DC I/O Pin Characteristics
Parameter
Input Leakage
Current
Output Leakage
Current
Output High Voltage
Output Low Voltage
Symbol
I
IL
I
LO
V
OH
V
OL
Test Conditions
V
IN
= 0 to V
DD
Output High Z
V
OUT
= 0 to V
DD
I
OH
= –4 mA
I
LO
= +4 mA
Min
– 1 uA
–1 uA
2.4
Max
1 uA
1 uA
0.4 V
Power Supply Currents
Parameter
Symbol
Test Conditions
CE
V
IL
All other inputs
V
IH
or
V
IL
Min. cycle time
I
OUT
= 0 mA
CE
V
IH
All other inputs
V
IH
or
≤V
IL
Min. cycle time
CE
V
DD
– 0.2 V
All other inputs
V
DD
– 0.2 V or
0.2 V
0 to 70°C
7 ns
8 ns
10 ns
12 ns
7 ns
–40 to 85°C
8 ns
10 ns
12 ns
Unit
Operating
Supply
Current
I
DD
150
130
105
90
160
140
115
100
mA
Standby
Current
I
SB1
28
30
25
22
38
40
35
32
mA
Standby
Current
I
SB2
10
20
mA
Rev: 1.02 10/2002
4/12
© 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.