欢迎访问ic37.com |
会员登录 免费注册
发布采购

HSD32M64D8KP-13 参数 Datasheet PDF下载

HSD32M64D8KP-13图片预览
型号: HSD32M64D8KP-13
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM模组256Mbyte ( 32Mx64bit ) ,无缓冲DIMM与基于堆栈16Mx8 , 4Banks , 4K参考, 3.3V [Synchronous DRAM Module 256Mbyte (32Mx64bit),DIMM Unbuffered with Based on Stacked 16Mx8, 4Banks, 4K Ref., 3.3V]
分类和应用: 动态存储器
文件页数/大小: 29 页 / 813 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
 浏览型号HSD32M64D8KP-13的Datasheet PDF文件第1页浏览型号HSD32M64D8KP-13的Datasheet PDF文件第2页浏览型号HSD32M64D8KP-13的Datasheet PDF文件第3页浏览型号HSD32M64D8KP-13的Datasheet PDF文件第5页浏览型号HSD32M64D8KP-13的Datasheet PDF文件第6页浏览型号HSD32M64D8KP-13的Datasheet PDF文件第7页浏览型号HSD32M64D8KP-13的Datasheet PDF文件第8页浏览型号HSD32M64D8KP-13的Datasheet PDF文件第9页  
HANBit
PIN FUNCTION DESCRIPTION
PIN
CLK
/CE
CKE
NAME
System clock
Chip enable
Clock enable
HSD32M64D8KP
INPUTT FUNCTION
Active on the positive going edge to sample all inputs.
Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and DQM
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disable input buffers for power down in standby.
CKE should be enabled 1CLK+tSS prior to valid command.
Row/column addresses are multiplexed on the same pins.
Row address : RA0 ~ RA11, Column address : CA0 ~ CA9
Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
Latches column addresses on the positive going edge of the CLK with CAS low.
Enables column access.
Enables write operation and row precharge.
Latches data in starting from CAS, WE active.
Makes data output Hi-Z, tSHZ after the clock and masks the output.
Blocks data input when DQM active. (Byte masking)
A0 ~ A11
BA0 ~ BA1
/RAS
/CAS
Address
Bank select address
Row address strobe
Column
strobe
Address
/WE
DQM0 ~ 7
Write enable
Data
mask
input/output
DQ0 ~ 63
Vcc/Vss
Data input/output
Power supply/ground
Data inputs/outputs are multiplexed on the same pins.
Power and ground for the input buffers and the core logic.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Voltage on Any Pin Relative to Vss
Voltage on Vcc Supply Relative to Vss
Power Dissipation
Storage Temperature
SYMBOL
V
IN ,OUT
Vcc
P
D
T
STG
RATING
-1.0V to 4.6V
-1.0V to 4.6V
16W
-55oC to 150oC
Short Circuit Output Current
I
OS
50mA
Notes:
Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be
restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
DC OPERATING CONDITIONS
(Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C))
PARAMETER
Supply Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input leakage current
URL:www.hbe.co.kr
SYMBOL
Vcc
V
IH
V
IL
V
OH
V
OL
I
LI
MIN
3.0
2.0
-0.3
2.4
-
-10
TYP.
3.3
3.0
0
-
-
-
MAX
3.6
Vcc+0.3
0.8
-
0.4
10
UNIT
V
V
V
V
V
uA
NOTE
1
2
I
OH
= -2mA
I
OL
= 2mA
3
-
4
-
HANBiT Electronics Co., Ltd