HANBit
HSD32M64D8KP
Notes :
1. V
IH
(max) = 5.6V AC. The overshoot voltage duration is
≤
3ns.
2. V
IL
(min) = -2.0V AC. The undershoot voltage duration is
≤
3ns.
3. Any input 0V
≤
V
IN
≤
V
DDQ
.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
CAPACITANCE
(VCC = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V
±
200 mV)
DESCRIPTION
Clock
/RAS, /CAS,/WE, CKE
CKE
/CS
DQM
Address
DQ (DQ0 ~ DQ7)
SYMBOL
C
CLK
C
IN
C
CKE
C
CS
C
DQM
C
ADD
C
OUT
MIN
10
40
10
10
5
40
64
MAX
14
60.8
15.2
15.2
7.6
60.8
96
UNITS
pF
pF
pF
pF
pF
pF
pF
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
TEST
PARAMETER
Operating current
(One bank active)
Precharge standby current
in
power-down mode
SYMBOL
CONDITION
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0mA
CKE
≤
V
IL
(max)
t
CC
=10ns
CKE & CLK
≤
V
IL
(max)
t
CC
=∞
CKE
≥
V
IH
(min)
CS*
≥
V
IH
(min), t
CC
=10ns
Input signals are changed
one time during 20ns
CKE
≥
V
IH
(min)
CLK
≤
V
IL
(max), t
CC
=∞
Input signals are stable
CKE
≤
V
IL
(max), t
CC
=10ns
CKE&CLK
≤
V
IL
(max)
t
CC
=∞
CKE≥V
IH
(min),
CS*≥V
IH
(min), t
CC
=10ns
Input signals are changed
one time during 20ns
CKE≥VIH(min)
CLK
≤VIL(max),
t
CC
=∞
Input signals are stable
I
O
= 0 mA
Page burst
4Banks Activated
t
CCD
= 2CLKs
t
RC
≥
t
RC
(min)
CKE
≤
0.2V
C
-13
1440
32
32
-10L
1440
mA
mA
mA
VERSION
UNIT
E
1
NOT
I
CC1
I
CC2
P
I
CC2
PS
Precharge standby current
in
non power-down mode
I
CC2
N
320
mA
160
80
mA
80
I
CC2
NS
Active standby current in
power-down mode
I
CC3
P
I
CC3
PS
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
480
mA
400
I
CC3
NS
Operating current
(Burst mode)
Refresh current
Self refresh current
I
CC4
I
CC5
I
CC6
1760
3200
32
1600
3040
mA
mA
mA
1
2
URL:www.hbe.co.kr
-
5
-
HANBiT Electronics Co., Ltd
HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
