IDT6116SA/LA
CMOS STATIC RAM 16K (2K x 8-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
AC ELECTRICAL CHARACTERISTICS
(V
CC
= 5V
±
10%, All Temperature Ranges)
6116SA15
(1)
6116LA15
(1)
Symbol
WRITE CYCLE
t
WC
t
CW
t
AW
t
AS
t
WP
t
WR
t
WHZ
(3)
t
DW
t
DH
(4)
t
OW
(3,4)
Write Cycle Time
Chip Select to End-of-
Write
Address Valid to End-
of-Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Write to Output
in High-Z
Data to Write Time
Overlap
Data Hold from Write
Time
Output Active from
End-of-Write
15
13
14
0
12
0
—
12
0
0
—
—
—
—
—
—
7
—
—
—
20
15
15
0
12
0
—
12
0
0
—
—
—
—
—
—
8
—
—
—
25
17
17
0
15
0
—
13
0
0
—
—
—
—
—
—
16
—
—
—
35
25
25
0
20
0
—
15
0
0
—
—
—
—
—
—
20
—
—
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
3089 tbl 14
6116SA20
6116LA20
Min.
Max.
6116SA25
6116LA25
Min.
Max.
6116SA35
6116LA35
Min.
Max.
Unit
Parameter
Min.
Max.
AC ELECTRICAL CHARACTERISTICS
(V
CC
= 5V
±
10%, All Temperature Ranges)
6116SA45
6116LA45
Symbol
t
WC
t
CW
t
AW
t
AS
t
WP
t
WR
t
WHZ
(3)
t
DW
t
DH
(4)
Parameter
Write Cycle Time
Chip Select to End of
Write
Address Valid to End
of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Write to Output
in High-Z
Data to Write Time
Overlap
Data Hold from Write
Time
Min.
45
30
30
0
25
0
—
20
0
0
Max.
—
—
—
—
—
—
25
—
—
—
WRITE CYCLE
55
40
45
5
40
5
—
25
5
0
—
—
—
—
—
—
30
—
—
—
70
40
65
15
40
5
—
30
5
0
—
—
—
—
—
—
35
—
—
—
90
55
80
15
55
5
—
30
5
0
—
—
—
—
—
—
40
—
—
—
120
70
105
20
70
5
—
35
5
0
—
—
—
—
—
—
40
—
—
—
150
90
120
20
90
10
—
40
10
0
—
—
—
—
—
—
40
—
—
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
6116SA55
(2)
6116LA55
(2)
Min.
Max.
6116SA70
(2)
6116LA70
(2)
Min. Max.
6116SA90
(2)
6116LA90
(2)
Min.
Max.
6116SA120
(2)
6116SA150
(2)
6116LA120
(2)
6116LA150
(2)
Min.
Max.
Min.
Max. Unit
t
OW
(3,4)
Output Active from
End of Write
NOTES:
3089 tbl 15
1. 0°C to +70°C temperature range only.
2. –55°C to +125°C temperature range only.
3. This parameter guaranteed with AC Load (Figure 2) by device characterization, but is not production tested.
4. The specification for t
DH
must be met by the device supplying write data to the RAM under all operation conditions. Although t
DH
and t
OW
values will vary
over voltage and temperature, the actual t
DH
will always be smaller than the actual t
OW
.
5.1
8
IDT [ INTEGRATED DEVICE TECHNOLOGY ]
