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IDT70121S25J 参数 Datasheet PDF下载

IDT70121S25J图片预览
型号: IDT70121S25J
PDF下载: 下载PDF文件 查看货源
内容描述: HIGH -SPEED 2K ×9双端口静态繁忙和中断RAM [HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT]
分类和应用:
文件页数/大小: 12 页 / 170 K
品牌: IDT [ INTEGRATED DEVICE TECHNOLOGY ]
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IDT 70121/70125S/L  
HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT  
COMMERCIAL TEMPERATURE RANGE  
TIMING WAVEFORM OF READ CYCLE NO. 1, EITHER SIDE(1,2,4)  
t
RC  
ADDRESS  
t
AA  
tOH  
t
OH  
PREVIOUS DATA VALID  
DATA VALID  
DATAOUT  
BUSYOUT  
2654 drw 05  
(3,4)  
t
BDD  
TIMING WAVEFORM OF READ CYCLE NO. 2, EITHER SIDE(5,6)  
tACE  
CE  
OE  
(2)  
HZ  
(4)  
t
tAOE  
(2)  
(1)  
tHZ  
tLZ  
VALID DATA  
DATAOUT  
(1)  
(4)  
tLZ  
tPD  
tPU  
ICC  
CURRENT  
50%  
50%  
ISS  
2654 drw 06  
NOTES:  
1. Timing depends on which signal is aserted last, OE or CE.  
2. Timing depends on which signal is deaserted first, OE or CE.  
3. tBDD delay is required only in a case where the opposite port is completing  
a write operation to the same address location. For simultanious read operations  
BUSY has no relationship to valid output data.  
4. Start of valid data depends on which timing becomes effective last, tAOE, tACE, tAA, or tBDD.  
5. R/W = VIH, and the address is valid prior to other coincidental with CE transition Low.  
6. R/W = VIH, CE = VIL, and OE = VIL. Address is valid prior to or coincident with CE transition Low.  
6.10  
5