IRF9952
2.0
N-Channel
I
D
= 2.2A
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
1.5
R
DS
(on) , Drain-to-Source On Resistance (Ω)
0.12
0.10
V
G S
= 4.5V
1.0
0.08
0.5
V
G S
= 10V
0.06
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
0.04
0
2
4
6
8
10
12
A
T
J
, Junction Temperature (
°
C)
I
D
, D rain C ur rent (A)
Fig 5.
Normalized On-Resistance
Vs. Temperature
Fig 6.
Typical On-Resistance Vs. Drain
Current
0.16
100
R
DS
(on) , Drain-to-Source On Resistance (Ω)
TOP
0.14
E
A S
, Single Pulse Avalanche Energy (mJ)
80
BOTTOM
I
D
0.89A
1.6A
2.0A
0.12
0.10
0.08
60
I
D
= 3 .5A
0.06
40
0.04
20
0.02
0.00
0
3
6
9
12
15
A
0
25
50
75
100
125
A
150
V
G S
, G ate -to-S ource V oltage (V)
Starting T ,
J
Junction Temperature (°C)
Fig 7.
Typical On-Resistance Vs. Gate
Voltage
Fig 8.
Maximum Avalanche Energy
Vs. Drain Current
IRF [ INTERNATIONAL RECTIFIER ]
