P-Channel
IRF9952
2.5
2.0
I
D
= -1.0A
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
R
DS(on)
, Drain-to-Source On Resistance (
Ω
)
2.0
1.5
1.5
1.0
V
G S
= -4.5V
1.0
0.5
0.5
V
G S
= -10V
0.0
0.0
1.0
2.0
3.0
4.0
5.0
0.0
-60 -40 -20
V
GS
= -10V
0
20
40
60
80 100 120 140 160
A
T
J
, Junction Temperature (
°
C)
-I
D
, D rain C urrent (A )
Fig 16.
Normalized On-Resistance
Vs. Temperature
Fig 17.
Typical On-Resistance Vs. Drain
Current
R
DS(on
)
, Drain-to-Source On Resistance (
Ω
)
0.80
150
EAS , Single Pulse Avalanche Energy (mJ)
120
ID
TOP
-0.58A
-1.0A
BOTTOM -1.3A
0.60
90
0.40
I
D
= -2.3A
60
0.20
30
0.00
0
3
6
9
12
15
A
0
25
50
75
100
125
150
-V
G S
, G ate -to-S ource V oltage ( V)
Starting TJ , Junction Temperature ( ° C)
Fig 18.
Typical On-Resistance Vs. Gate
Voltage
Fig 19.
Maximum Avalanche Energy
Vs. Drain Current
IRF [ INTERNATIONAL RECTIFIER ]
