N-Channel
350
IRF9952
I
D
= 1.8A
V
DS
= 10V
V
GS
, Gate-to-Source Voltage (V)
A
300
V
GS
C
is s
C
rs s
C
o ss
= 0 V,
f = 1M H z
= C
gs
+ C
gd
, C
ds
SH O RTE D
= C
gd
= C
ds
+ C
g d
20
16
C , C a p a c ita n c e (p F )
250
C
is s
C
os s
200
12
150
8
100
C
rss
4
50
0
1
10
100
0
0
2
4
6
8
10
V
D S
, Drain-to-Source V oltage (V)
Q
G
, Total Gate Charge (nC)
Fig 9.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
Thermal Response (Z
thJA
)
0.50
0.20
10
0.10
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.01
0.1
1
10
100
0.1
0.00001
0.0001
0.001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
IRF [ INTERNATIONAL RECTIFIER ]
