IRF9952
400
P-Channel
-V GS, Gate-to-Source Voltage (V)
V
GS
C
iss
C
rs s
C
os s
=
=
=
=
0V ,
f = 1MH z
C
gs
+ C
g d
, C
ds
S H OR TED
C
gd
C
ds
+ C
gd
20
I
D
= -2.3A
V
DS
= -10V
16
C , C a p a c ita n c e (p F )
300
C
iss
C
os s
200
12
8
100
C
rs s
4
0
1
10
100
A
0
0
2
4
6
8
10
-V
D S
, Drain-to-Source V oltage (V)
Q G, Total Gate Charge (nC)
Fig 20.
Typical Capacitance
Vs.
Drain-to-Source Voltage
Fig 21.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
(Z
thJA
)
0.50
0.20
10
0.10
Thermal Response
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.01
0.1
1
10
100
0.1
0.00001
0.0001
0.001
t
1
, Rectangular Pulse Duration (sec)
Fig 22.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
IRF [ INTERNATIONAL RECTIFIER ]
