128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory
Global Main-Array Protection
Global Main-Array Protection
Global main-array protection can be implemented by controlling V
PP
. When program-
ming or erasing main-array blocks, V
PP
must be equal to or greater than V
PPL, min
. When
V
PP
is below V
PPLK
, PROGRAM or ERASE operations are inhibited, thus providing abso-
lute protection of the main array.
Various methods exist for controlling V
PP
, ranging from simple logic control to off-board
voltage control. The following figure shows example V
PP
supply connections that can be
used to support PROGRAM or ERASE operations and main-array protection.
Figure 14: V
PP
Supply Connection Example
V
CC
V
PPH
≤10kΩ
V
CC
V
PP
V
CC
PROT#
V
PPL
V
CC
V
PP
• Factory programming: V
PP
= V
PPH
• Program/erase protection: V
PP
≤
V
PPLK
• Program/Erase enable: PROT# = V
IH
• Program/Erase protection: PROT# = V
IL
V
CC
V
PPH
V
PPL
V
CC
V
PP
V
CC
V
PPL
V
CC
V
PP
• Low-voltage programming
or
• Factory programming
• Low-Voltage programming: V
PP
= V
CC
• Program/Erase protection: None
PDF: 09005aef8448483a
128_256_512_65nm_g18.pdf - Rev. F 8/11 EN
51
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2011 Micron Technology, Inc. All rights reserved.
MICRON [ MICRON TECHNOLOGY ]
