128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory
Power and Reset Specifications
Automatic Power Saving
Automatic power saving provides low-power operation following reads during active
mode. After data is read from the memory array and the address lines are quiescent, au-
tomatic power savings automatically places the device into standby. In automatic power
savings, device current is reduced to I
CCAPS
.
Power Supply Decoupling
Flash memory devices require careful power supply decoupling to prevent external
transient noise from affecting device operations, and to prevent internallygenerated
transient noise from affecting other devices in the system.
Ceramic chip capacitors of 0.01µF to 0.1µF should be used between all V
CC
, V
CCQ
, and
V
PP
supply connections and system ground. These high-frequency, inherently low-in-
ductance capacitors should be placed as close as possible to the device package, or on
the opposite side of the printed circuit board close to the center of the device package
footprint.
Larger (4.7µF to 33.0µF) electrolytic or tantulum bulk capacitors should also be distrib-
uted as needed throughout the system to compensate for voltage sags and surges
caused by circuit trace inductance.
Transient current magnitudes depend on the capacitive and inductive loading on the
device’s outputs. For best signal integrity and device performance, high-speed design
rules should be used when designing the printed-circuit board. Circuit-trace impedan-
ces should match output-driver impedance with adequate ground-return paths. This
will help minimize signal reflections (overshoot/undershoot) and noise caused by high-
speed signal edge rates.
PDF: 09005aef8448483a
128_256_512_65nm_g18.pdf - Rev. F 8/11 EN
55
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2011 Micron Technology, Inc. All rights reserved.
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