128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory
Electrical Specifications – Program/Erase Characteristics
Electrical Specifications – Program/Erase Characteristics
Table 42: Program/Erase Characteristics
Note 1 applies to all
V
PPL
or V
PPH
Parameter
Word Programming
Program time Single word (first word)
Single word (subsequent word)
Buffered Programming
Program time Single word
One buffer (512 words) 90nm
(128–
512Mb)
65nm
(128–
1024Mb)
45nm
(128–
1024Mb)
Buffer Enhanced Factory Programming (BEFP)
Program
Single word
90nm
(128–
512Mb)
65nm
(128–
1024Mb)
45nm
(128–
1024Mb)
BEFP setup
Erasing and Suspending
Erase time
Suspend la-
tency
Blank Check
Main array
block
Main array block
Notes:
t
BC/MB
t
BEFP/
t
BEFP/W
t
PROG/W
t
PROG/PB
t
PROG/W
Symbol
Min
–
Typ
115
50
Max
230
230
500
4.3
Units
µs
Notes
–
–
250
2.15
µs
ms
1.02
2.05
0.57
1.14
–
4.2
–
µs
2.0
0.93
5
–
–
µs
SETUP
128K-word parameter
Program suspend
Erase suspend
t
ERS/MAB
t
SUSP/P
t
SUSP/E
–
–
–
–
0.9
20
20
3.2
4
30
30
–
s
µs
µs
ms
1. Typical values measured at T
C
= 25°C and nominal voltages. Performance numbers are
valid for all speed versions. Excludes overhead. Sampled, but not 100% tested.
2. Conventional word programming: First and subsequent words refer to first word and
subsequent words in control mode programming region.
3. Averaged over the entire device. BEFP is not validated at V
PPL
.
PDF: 09005aef8448483a
128_256_512_65nm_g18.pdf - Rev. F 8/11 EN
80
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2011 Micron Technology, Inc. All rights reserved.
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