256Mb and 512Mb (256Mb/256Mb), P30-65nm
DC Electrical Specifications
DC Electrical Specifications
Table 40: DC Current Characteristics
CMOS Inputs
(V
CCQ
= 1.7–
3.6V)
Parameter
Input load current
Symbol
I
LI
Typ
–
Max
±1
TTL Inputs
(V
CCQ
= 2.4–
3.6V)
Typ
–
Max
±2
Unit Test Conditions
µA
V
CC
= V
CC
(MAX)
V
CCQ
= V
CCQ
(MAX)
V
IN
= V
CCQ
or V
SS
V
CC
= V
CC
(MAX)
V
CCQ
= V
CCQ
(MAX)
V
IN
= V
CCQ
or V
SS
V
CC
= V
CC
(MAX)
V
CCQ
= V
CCQ
(MAX)
CE# = V
CCQ
RST# = V
CCQ
(for I
CCS
)
RST# = V
SS
(for I
CCD
)
WP# = V
IH
1. 2
Notes
1, 6
Output DQ[15:0], WAIT
leakage
current
V
CC
standby,
Power-down
256Mb
512Mb
I
LO
–
±1
–
±10
µA
I
CCS
,
I
CCD
65
130
210
420
65
130
210
420
µA
Average Asynchronous sin-
V
CC
read gle-word f = 5 MHz
current (1 CLK)
Page mode read
f
= 13 MHz (17 CLK)
Synchronous burst
f
= 52 MHz, LC = 4
V
CC
program current,
V
CC
erase current
I
CCR
26
12
19
16
21
31
16
22
18
24
50
50
210
225
26
12
19
16
21
35
35
65
70
31
16
22
18
24
50
50
210
225
mA 16-word read V
CC
= V
CC
(MAX)
mA 16-word read
mA 8-word read
CE# = V
IL
1
mA 16-word read OE# = V
IH
mA Continuous
read
Inputs:
V
IL
or V
IH
1, 3, 5
1, 3, 5
1, 3, 4
I
CCW,
I
CCE
35
35
mA V
PP
= V
PPL
,
program/erase in progress
V
PP
= V
PPH
,
program/erase in progress
µA
CE# = V
CCQ
, suspend in pro-
gress
V
CC
program sus-
pend current,
V
CC
erase suspend
current
256Mb
512Mb
I
CCWS,
I
CCES
65
70
V
PP
standby current,
V
PP
program suspend current,
V
PP
erase suspend current
V
PP
read
V
PP
program current
I
PPS,
I
PPWS,
I
PPES
I
PPR
I
PPW
0.2
5
0.2
5
µA
V
PP
= V
PPL
,
suspend in progress
V
PP
= V
PPL
V
PP
= V
PPH
, program in pro-
gress
1, 3, 7
2
0.05
0.05
15
0.1
0.1
0.1
0.1
2
0.05
0.05
0.05
0.05
15
0.1
0.1
0.1
0.1
µA
1, 3
3
mA V
PP
= V
PPL
, program in progress
V
PP
erase current
I
PPE
0.05
0.05
mA V
PP
= V
PPL
, erase in progress
V
PP
= V
PPH
, erase in progress
3
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. C 12/13 EN
80
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