64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
Electrical Characteristics
Table 12:
Description
Input Capacitance
Input/Output Capacitance (DQ)
Capacitance
Conditions
T
C
= +25ºC; f = 1 MHz;
V
IN
= 0V
Symbol
C
IN
C
IO
Min
2.0
2.5
Max
6
6
Units
pF
pF
Notes
Notes: 1. These parameters are verified in device characterization and are not 100 percent tested.
Figure 24:
AC Input/Output Reference Waveform
V
CC
Q
Input
1
V
CC
/2
2
Test Points
V
CC
Q/2
3
Output
V
SS
Q
Notes: 1. AC test inputs are driven at V
CC
Q for a logic 1 and V
SS
Q for a logic 0. Input rise and fall
times (10% to 90%) < 1.6ns.
2. Input timing begins at V
CC
/2. Due to the possibility of a difference between V
CC
and V
CC
Q,
the input test point may not be shown to scale.
3. Output timing ends at V
CC
Q/2.
Figure 25:
Output Load Circuit
VccQ
R1
DUT
30pF
R2
Test Point
Note:
All tests are performed with the outputs configured for full drive strength (BCR[5] = 0).
Table 13:
Output Load Circuit
V
CC
Q
1.8V
2.5V
3.0V
R1/R2
2.7KΩ
3.7KΩ
4.5KΩ
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
32
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